公开(公告)号：US12125884B2

公开(公告)日：2024-10-22

申请号：US18301146

申请日：2023-04-14

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Kevin Kyuheon Cho ,  Bongyong Lee ,  Kyeongseok Park ,  Doojin Choi ,  Thomas Neyer ,  Ki Min Kim

IPC: H01L29/16 ,  H01L29/10 ,  H01L29/66 ,  H01L29/78

CPC classification number: H01L29/1608 ,  H01L29/1045 ,  H01L29/66068 ,  H01L29/66712 ,  H01L29/7802

Abstract: A SiC MOSFET device with alternating p-well widths, including an undulating channel, is described. The undulating channel provides current paths of multiple widths, which enables optimization of on-resistance, transconductance, threshold voltage, and channel length. The multi-width p-well region further defines corresponding multi-width Junction FETs (JFETs). The multi-width JFETs enable improved response to a short-circuit event. A high breakdown voltage is obtained by distributing a high electric field in a JFET of a first width into a JFET of a second width.

公开(公告)号：US11658214B2

公开(公告)日：2023-05-23

申请号：US17248160

申请日：2021-01-12

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Kevin Kyuheon Cho ,  Bongyong Lee ,  Kyeongseok Park ,  Doojin Choi ,  Thomas Neyer ,  Ki Min Kim

IPC: H01L29/10 ,  H01L29/78 ,  H01L29/16 ,  H01L29/66

CPC classification number: H01L29/1608 ,  H01L29/1045 ,  H01L29/66068 ,  H01L29/66712 ,  H01L29/7802

Abstract: A SiC MOSFET device with alternating p-well widths, including an undulating channel, is described. The undulating channel provides current paths of multiple widths, which enables optimization of on-resistance, transconductance, threshold voltage, and channel length. The multi-width p-well region further defines corresponding multi-width Junction FETs (JFETs). The multi-width JFETs enable improved response to a short-circuit event. A high breakdown voltage is obtained by distributing a high electric field in a JFET of a first width into a JFET of a second width.

公开(公告)号：US11605732B2

公开(公告)日：2023-03-14

申请号：US16675813

申请日：2019-11-06

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Kevin Kyuheon Cho ,  Bongyong Lee ,  Kyeongseok Park ,  Doojin Choi ,  Thomas Neyer ,  James Joseph Victory

IPC: H01L29/78 ,  H01L21/04 ,  H01L29/66 ,  H01L29/16

Abstract: A power device includes a silicon carbide substrate. A gate is provided on a first side of the silicon carbide substrate. A graded channel includes a first region having a first dopant concentration and a second region having a second dopant concentration, the second dopant concentration being greater than the first dopant concentration.