Invention Grant
- Patent Title: Method of fabricating a light emitting device having a stacked structure
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Application No.: US17193443Application Date: 2021-03-05
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Publication No.: US11658263B2Publication Date: 2023-05-23
- Inventor: Ji Hoon Park , Ji Hun Kang , Chae Hon Kim , Yong Hyun Baek , Hyo Shik Choi
- Applicant: SEOUL VIOSYS CO., LTD.
- Applicant Address: KR Gyeonggi-do
- Assignee: Seoul Viosys Co., Ltd.
- Current Assignee: Seoul Viosys Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: LaBatt, LLC
- Main IPC: H01L21/66
- IPC: H01L21/66 ; H01L33/00

Abstract:
A method of fabricating a light emitting device includes (i) determining whether each measurement location is defective or not based on a measurement result of the emission wavelength of each location, (ii) forming a test stacked structure by combining one of the first wafers, one of the second wafers, and one of the third wafers in a set of wafers, and (iii) calculating a combination yield of the test stacked structure based on a count of defective measurement locations that overlap in the test stacked structure.
Public/Granted literature
- US20210280738A1 METHOD OF FABRICATING A LIGHT EMITTING DEVICE HAVING A STACKED STRUCTURE Public/Granted day:2021-09-09
Information query
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