公开(公告)号：US12125945B2

公开(公告)日：2024-10-22

申请号：US18097319

申请日：2023-01-16

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Yong Hyun Baek ,  Ji Hun Kang ,  Chae Hon Kim ,  Ji Hoon Park

IPC: H01L33/24 ,  H01L33/06 ,  H01L33/32

CPC classification number: H01L33/24 ,  H01L33/06 ,  H01L33/32

Abstract: A light emitting diode includes an n-type nitride semiconductor layer, a V-pit generation layer located over the n-type nitride semiconductor layer and having a V-pit, an active layer located on the V-pit generation layer, and a p-type nitride semiconductor layer located on the active layer. The active layer includes a well layer, which includes a first well layer portion formed along a flat surface of the V-pit generation layer and a second well layer portion formed in the V-pit of the V-pit generation layer. The active layer emits light having at least two peak wavelengths at a single chip level.

公开(公告)号：US20180040767A1

公开(公告)日：2018-02-08

申请号：US15551575

申请日：2016-01-28

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Jong Min Jang ,  Jong Kyun You ,  Da Hye Kim ,  Chae Hon Kim ,  Seon Min Bae ,  Jae Hee Lim

IPC: H01L33/10 ,  H01L33/22 ,  H01L33/38 ,  H01L33/32 ,  H01L33/40 ,  H01L33/16

CPC classification number: H01L33/10 ,  H01L33/0075 ,  H01L33/16 ,  H01L33/20 ,  H01L33/22 ,  H01L33/32 ,  H01L33/38 ,  H01L33/40 ,  H01L33/405 ,  H01L33/42

Abstract: Disclosed is a light-emitting device. The light-emitting device comprises: a light-emitting structure comprising a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer; a first contact electrode which ohmically contacts the first conductive semiconductor layer; a second contact electrode which is disposed on the second conductive semiconductor layer; and an insulation layer which is disposed on the light-emitting structure and insulates the first contact electrode and the second contact electrode, wherein the light-emitting structure has a non-polar or semi-polar growth surface; the upper surface of the second conductive semiconductor layer comprises a non-polar or semi-polar surface; and the second contact electrode comprises a conductive oxide layer which ohmically contacts the second conductive semiconductor layer, and a reflective electrode layer disposed on the conductive oxide layer.

公开(公告)号：US11804573B2

公开(公告)日：2023-10-31

申请号：US17119139

申请日：2020-12-11

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Toshiya Yokogawa ,  Chae Hon Kim ,  Chung Hoon Lee

IPC: H01L33/32 ,  H01L33/40 ,  H01L33/60 ,  H01L33/38

CPC classification number: H01L33/32 ,  H01L33/382 ,  H01L33/405 ,  H01L33/60

Abstract: A group III-V light-emitting diode is provided. The light-emitting diode includes a light generating portion including an active layer interposed between a first conductivity type semiconductor layer and a second conductivity type semiconductor layer. The active layer generates light. The light-emitting diode further includes an optical trap disposed on an optical path of light generated from the active layer. The optical trap includes a light absorption layer interposed between light guide layers. The light-emitting diode further includes a side reflector disposed on a side surface of the optical trap.

公开(公告)号：US20160372630A1

公开(公告)日：2016-12-22

申请号：US15184924

申请日：2016-06-16

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Jong Min Jang ,  Seon Min Bae ,  Chae Hon Kim

IPC: H01L33/02 ,  H01L33/40 ,  H01L33/38 ,  H01L33/24 ,  H01L33/18 ,  H01L33/08 ,  H01L33/62 ,  H01L33/44 ,  H01L33/32 ,  H01L33/42 ,  H01L33/16

CPC classification number: H01L33/025 ,  H01L33/08 ,  H01L33/16 ,  H01L33/18 ,  H01L33/24 ,  H01L33/32 ,  H01L33/38 ,  H01L33/382 ,  H01L33/405 ,  H01L33/42 ,  H01L33/44 ,  H01L33/62

Abstract: A light emitting diode includes: a light emitting structure including a first conductive type semiconductor layer, a second conductive type semiconductor layer, and an active layer interposed between the first conductive type semiconductor layer and the second conductive type semiconductor layer; a first contact electrode forming ohmic contact with the first conductive type semiconductor layer; a second contact electrode disposed on the second conductive type semiconductor layer; and an insulation layer disposed on the light emitting structure and insulating the first contact electrode from the second contact electrode, wherein the first conductive type semiconductor layer includes a nitride-based substrate, the nitride-based substrate having a thread dislocation density of 104 cm−2 or less, an oxygen impurity concentration of 1019 cm−3 or less, and an optical extinction coefficient of less than 5 cm−1 at a wavelength of 465 nm to 700 nm.

Abstract translation: 发光二极管包括：发光结构，包括第一导电类型半导体层，第二导电类型半导体层和介于第一导电类型半导体层和第二导电类型半导体层之间的有源层; 与所述第一导电型半导体层形成欧姆接触的第一接触电极; 设置在所述第二导电型半导体层上的第二接触电极; 以及绝缘层，其设置在所述发光结构上并使所述第一接触电极与所述第二接触电极绝缘，其中所述第一导电类型半导体层包括氮化物基衬底，所述氮化物基衬底的线位错密度为104cm- 2以下，氧离子浓度为1019cm -3以下，光波消失系数小于5cm -1，波长为465nm〜700nm。

公开(公告)号：US20150115223A1

公开(公告)日：2015-04-30

申请号：US14526427

申请日：2014-10-28

Applicant: Seoul Viosys Co., Ltd.

Inventor： Woo Chul Kwak ,  Seung Kyu Choi ,  Chae Hon Kim ,  Jung Whan Jung ,  Yong Hyun Baek ,  Sam Seok Jang ,  Su Youn Hong ,  Mi Gyeong Jeong

IPC: H01L29/20 ,  H01L29/205 ,  H01L29/15 ,  H01L29/201

CPC classification number: H01L29/2003 ,  H01L21/02458 ,  H01L21/02513 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/0262 ,  H01L29/0607 ,  H01L29/155 ,  H01L29/201 ,  H01L29/205 ,  H01L33/02 ,  H01L33/025 ,  H01L33/04 ,  H01L33/20 ,  H01L33/22

Abstract: Disclosed are semiconductor devices and methods of manufacturing the same. The semiconductor device includes: a first conductive type semiconductor layer including a first lower conductive type semiconductor layer and a first upper conductive type semiconductor layer; a V-pit passing through at least one portion of the first upper conductive type semiconductor layer; a second conductive type semiconductor layer placed over the first conductive type semiconductor and filling the V-pit; and an active layer interposed between the first and second conductive type semiconductor layers with the V-pit passing through the active layer. The first upper conductive type semiconductor layer has a higher defect density than the first lower conductive type semiconductor layer and includes a V-pit generation layer comprising a starting point of the V-pit. The semiconductor device includes the V-pits having a large size and a high density to efficiently preventing damage to the semiconductor device due to electrostatic discharge.

Abstract translation: 公开了半导体器件及其制造方法。 半导体器件包括：第一导电型半导体层，包括第一下导电型半导体层和第一上导电型半导体层; 通过所述第一上导电型半导体层的至少一部分的V凹坑; 放置在所述第一导电型半导体上并填充所述V坑的第二导电型半导体层; 以及插入在第一和第二导电类型半导体层之间的有源层，其中V坑穿过有源层。 第一上导电型半导体层具有比第一下导电型半导体层更高的缺陷密度，并且包括包含V坑的起点的V坑生成层。 半导体器件包括具有大尺寸和高密度的V型凹坑，以有效地防止由于静电放电对半导体器件的损坏。

公开(公告)号：US20150091047A1

公开(公告)日：2015-04-02

申请号：US14500836

申请日：2014-09-29

Applicant: Seoul Viosys Co., Ltd.

Inventor： Seung Kyu Choi ,  Woo Chul Kwak ,  Chae Hon Kim ,  Jung Whan Jung ,  Sam Seok Jang

IPC: H01L33/00 ,  H01L33/32 ,  H01L33/02

Abstract: Disclosed are a method of growing a nitride semiconductor, a method of manufacturing a template for semiconductor fabrication and a method of manufacturing a semiconductor light emitting device using the same. The method of manufacturing a semiconductor light emitting device includes: preparing a growth substrate having a defect aggregation region; growing a first nitride semiconductor layer over the growth substrate; growing a second nitride semiconductor layer over the first nitride semiconductor layer; growing a third nitride semiconductor layer over the second nitride semiconductor layer; growing an active layer over the third nitride semiconductor layer; and forming a second conductive type semiconductor layer over the active layer. Accordingly, semiconductor layers grown on the template can have excellent crystallinity.

Abstract translation: 公开了一种生长氮化物半导体的方法，制造用于半导体制造的模板的方法以及使用其制造半导体发光器件的方法。 制造半导体发光器件的方法包括：制备具有缺陷聚集区域的生长衬底; 在生长衬底上生长第一氮化物半导体层; 在所述第一氮化物半导体层上生长第二氮化物半导体层; 在所述第二氮化物半导体层上生长第三氮化物半导体层; 在第三氮化物半导体层上生长活性层; 以及在所述有源层上形成第二导电类型半导体层。 因此，在模板上生长的半导体层可以具有优异的结晶度。

公开(公告)号：US20140361247A1

公开(公告)日：2014-12-11

申请号：US14467470

申请日：2014-08-25

Applicant: SEOUL VIOSYS CO., LTD. ,  MITSUBISHI CHEMICAL CORPORATION

Inventor： Seung Kyu CHOI ,  Chae Hon Kim ,  Jung Whan Jung ,  Ki Bum Nam ,  Kenji Shimoyama ,  Kaori Kurihara

IPC: H01L33/00 ,  H01L33/12 ,  H01L33/06

CPC classification number: H01L33/0025 ,  H01L33/0075 ,  H01L33/06 ,  H01L33/12 ,  H01L33/32

Abstract: Disclosed herein is a light emitting diode (LED) including: a gallium nitride substrate; a gallium nitride-based first contact layer disposed on the gallium nitride substrate; a gallium nitride-based second contact layer; an active layer having a multi-quantum well structure and disposed between the first and second contact layers; and a super-lattice layer having a multilayer structure and disposed between the first contact layer and the active layer. By employing the gallium nitride substrate, the crystallinity of the semiconductor layers can be improved, and in addition, by disposing the super-lattice layer between the first contact layer and the active layer, a crystal defect that may be generated in the active layer can be prevented.

Abstract translation: 本文公开了一种发光二极管（LED），包括：氮化镓衬底; 设置在氮化镓衬底上的基于氮化镓的第一接触层; 氮化镓基第二接触层; 具有多量子阱结构并设置在第一和第二接触层之间的有源层; 以及具有多层结构并设置在第一接触层和有源层之间的超晶格层。 通过使用氮化镓衬底，可以提高半导体层的结晶度，另外通过在第一接触层和有源层之间设置超晶格层，可以在有源层中产生的晶体缺陷可以 被阻止

公开(公告)号：US11935990B2

公开(公告)日：2024-03-19

申请号：US17537341

申请日：2021-11-29

Applicant: Seoul Viosys Co., Ltd.

Inventor： Jong Min Jang ,  Chae Hon Kim ,  Chang Youn Kim ,  Jae Hee Lim

IPC: H01L33/36 ,  H01L23/00 ,  H01L33/10 ,  H01L33/32 ,  H01L33/40 ,  H01L33/60 ,  H01L33/00 ,  H01L33/20 ,  H01L33/22 ,  H01L33/46

CPC classification number: H01L33/405 ,  H01L24/13 ,  H01L33/10 ,  H01L33/32 ,  H01L33/60 ,  H01L33/007 ,  H01L33/0093 ,  H01L33/20 ,  H01L33/22 ,  H01L33/46 ,  H01L2933/0016 ,  H01L2933/0025

Abstract: A light emitting diode including a side reflection layer. The light emitting diode includes: a semiconductor stack and a light exit surface having a roughened surface through which light generated from an active layer is emitted; side surfaces defining the light exit surface; and a side reflection layer covering at least part of the side surfaces. The light exit surface is disposed over a first conductivity type semiconductor layer opposite to the ohmic reflection layer, all layers from the active layer to the light exit surface are formed of gallium nitride-based semiconductors, and a distance from the active layer to the light exit surface is 50 μm or more.

公开(公告)号：US11557695B2

公开(公告)日：2023-01-17

申请号：US17165177

申请日：2021-02-02

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Yong Hyun Baek ,  Ji Hun Kang ,  Chae Hon Kim ,  Ji Hoon Park

IPC: H01L33/24 ,  H01L33/32 ,  H01L33/06

Abstract: A light emitting diode includes an n-type nitride semiconductor layer, a V-pit generation layer located over the n-type nitride semiconductor layer and having a V-pit, an active layer located on the V-pit generation layer, and a p-type nitride semiconductor layer located on the active layer. The active layer includes a well layer, which includes a first well layer portion formed along a flat surface of the V-pit generation layer and a second well layer portion formed in the V-pit of the V-pit generation layer. The light emitting diode emits light having at least two peak wavelengths at a single chip level.

公开(公告)号：US20220085251A1

公开(公告)日：2022-03-17

申请号：US17537341

申请日：2021-11-29

Applicant: Seoul Viosys Co., Ltd.

Inventor： Jong Min Jang ,  Chae Hon Kim ,  Chang Youn Kim ,  Jae Hee Lim

IPC: H01L33/40 ,  H01L33/32 ,  H01L23/00 ,  H01L33/10 ,  H01L33/60

Abstract: A light emitting diode including a side reflection layer. The light emitting diode includes: a semiconductor stack and a light exit surface having a roughened surface through which light generated from an active layer is emitted; side surfaces defining the light exit surface; and a side reflection layer covering at least part of the side surfaces. The light exit surface is disposed over a first conductivity type semiconductor layer opposite to the ohmic reflection layer, all layers from the active layer to the light exit surface are formed of gallium nitride-based semiconductors, and a distance from the active layer to the light exit surface is 50 μm or more.