公开(公告)号：US11557695B2

公开(公告)日：2023-01-17

申请号：US17165177

申请日：2021-02-02

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Yong Hyun Baek ,  Ji Hun Kang ,  Chae Hon Kim ,  Ji Hoon Park

IPC: H01L33/24 ,  H01L33/32 ,  H01L33/06

Abstract: A light emitting diode includes an n-type nitride semiconductor layer, a V-pit generation layer located over the n-type nitride semiconductor layer and having a V-pit, an active layer located on the V-pit generation layer, and a p-type nitride semiconductor layer located on the active layer. The active layer includes a well layer, which includes a first well layer portion formed along a flat surface of the V-pit generation layer and a second well layer portion formed in the V-pit of the V-pit generation layer. The light emitting diode emits light having at least two peak wavelengths at a single chip level.

公开(公告)号：US12250839B2

公开(公告)日：2025-03-11

申请号：US18530694

申请日：2023-12-06

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Yong Hyun Baek ,  Ji Hun Kang ,  Chae Hon Kim ,  Ji Hoon Park ,  So Ra Lee

IPC: H01L33/06 ,  G09G3/20 ,  G09G3/32 ,  H01L25/075 ,  H01L33/24 ,  H01L33/32 ,  H01L33/62 ,  H10H20/812 ,  H10H20/821 ,  H10H20/825 ,  H10H20/857 ,  F21S6/00 ,  F21W106/00 ,  F21W107/30 ,  F21Y115/10

Abstract: A lighting apparatus includes a light emitting diode, in which the light emitting diode includes an n-type nitride semiconductor layer, an active layer located on the n-type nitride semiconductor layer, and a p-type nitride semiconductor layer located on the active layer. The light emitting diode emits light that varies from yellow light to white light depending on a driving current.

公开(公告)号：US12095001B2

公开(公告)日：2024-09-17

申请号：US17228225

申请日：2021-04-12

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Yong Hyun Baek ,  Ji Hun Kang ,  Chae Hon Kim ,  Ji Hoon Park

IPC: H01L33/06 ,  H01L27/15 ,  H01L33/24 ,  H01L33/32 ,  H01L33/58 ,  H01L33/62

CPC classification number: H01L33/06 ,  H01L27/156 ,  H01L33/24 ,  H01L33/32 ,  H01L33/58 ,  H01L33/62

Abstract: A light emitting diode includes an n-type nitride semiconductor layer, an active layer located on the n-type nitride semiconductor layer, and a p-type nitride semiconductor layer located on the active layer. The active layer has a single structure of a multi-quantum well in which a plurality of barrier layers and a plurality of well layers are stacked, and the active layer emits white light.

公开(公告)号：US11621370B2

公开(公告)日：2023-04-04

申请号：US17328498

申请日：2021-05-24

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Yong Hyun Baek ,  Ji Hun Kang ,  Chae Hon Kim ,  Ji Hoon Park ,  So Ra Lee

IPC: H01L33/06 ,  H01L25/075 ,  H01L33/24 ,  H01L33/32 ,  H01L33/62 ,  G09G3/32 ,  G09G3/20 ,  F21S6/00 ,  F21Y115/10 ,  F21W107/30 ,  F21W106/00

Abstract: A lighting apparatus includes a light emitting diode, in which the light emitting diode includes an n-type nitride semiconductor layer, an active layer located on the n-type nitride semiconductor layer, and a p-type nitride semiconductor layer located on the active layer. The light emitting diode emits light that varies from yellow light to white light depending on an driving current.

公开(公告)号：US12125945B2

公开(公告)日：2024-10-22

申请号：US18097319

申请日：2023-01-16

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Yong Hyun Baek ,  Ji Hun Kang ,  Chae Hon Kim ,  Ji Hoon Park

IPC: H01L33/24 ,  H01L33/06 ,  H01L33/32

CPC classification number: H01L33/24 ,  H01L33/06 ,  H01L33/32

Abstract: A light emitting diode includes an n-type nitride semiconductor layer, a V-pit generation layer located over the n-type nitride semiconductor layer and having a V-pit, an active layer located on the V-pit generation layer, and a p-type nitride semiconductor layer located on the active layer. The active layer includes a well layer, which includes a first well layer portion formed along a flat surface of the V-pit generation layer and a second well layer portion formed in the V-pit of the V-pit generation layer. The active layer emits light having at least two peak wavelengths at a single chip level.

公开(公告)号：US11843076B2

公开(公告)日：2023-12-12

申请号：US18130063

申请日：2023-04-03

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Yong Hyun Baek ,  Ji Hun Kang ,  Chae Hon Kim ,  Ji Hoon Park ,  So Ra Lee

IPC: H01L33/06 ,  H01L25/075 ,  H01L33/24 ,  H01L33/32 ,  H01L33/62 ,  G09G3/32 ,  G09G3/20 ,  F21S6/00 ,  F21Y115/10 ,  F21W107/30 ,  F21W106/00

CPC classification number: H01L33/06 ,  G09G3/2003 ,  G09G3/32 ,  H01L25/0753 ,  H01L33/24 ,  H01L33/32 ,  H01L33/62 ,  F21S6/003 ,  F21W2106/00 ,  F21W2107/30 ,  F21Y2115/10 ,  G09G2300/0452 ,  G09G2320/0666

Abstract: A lighting apparatus includes a light emitting diode, in which the light emitting diode includes an n-type nitride semiconductor layer, an active layer located on the n-type nitride semiconductor layer, and a p-type nitride semiconductor layer located on the active layer. The light emitting diode emits light that varies from yellow light to white light depending on a driving current.

公开(公告)号：US11658263B2

公开(公告)日：2023-05-23

申请号：US17193443

申请日：2021-03-05

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Ji Hoon Park ,  Ji Hun Kang ,  Chae Hon Kim ,  Yong Hyun Baek ,  Hyo Shik Choi

IPC: H01L21/66 ,  H01L33/00

CPC classification number: H01L33/0095 ,  H01L22/20

Abstract: A method of fabricating a light emitting device includes (i) determining whether each measurement location is defective or not based on a measurement result of the emission wavelength of each location, (ii) forming a test stacked structure by combining one of the first wafers, one of the second wafers, and one of the third wafers in a set of wafers, and (iii) calculating a combination yield of the test stacked structure based on a count of defective measurement locations that overlap in the test stacked structure.