Invention Grant
- Patent Title: Low power MTJ-based analog memory device
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Application No.: US17336994Application Date: 2021-06-02
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Publication No.: US11664059B2Publication Date: 2023-05-30
- Inventor: Dimitri Houssameddine , Saba Zare , Heng Wu , Karthik Yogendra
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agent Heather Johnston
- Main IPC: G11C16/04
- IPC: G11C16/04 ; G11C11/16 ; G11C27/00 ; H01F10/32
Abstract:
A memory system may include a magnetic tunnel junction stack, a first high resistance tunnel barrier, and a first voltage controlled magnetic anisotropy write layer. The first voltage controlled magnetic anisotropy write layer may be adjacent the high resistance tunnel barrier, and the voltage controlled magnetic anisotropy write line may include a magnetic material in direct contact with a high resistance tunnel barrier.
Public/Granted literature
- US20220392504A1 LOW POWER MTJ-BASED ANALOG MEMORY DEVICE Public/Granted day:2022-12-08
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