Invention Grant
- Patent Title: Managing data disturbance in a memory with asymmetric disturbance effects
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Application No.: US17368651Application Date: 2021-07-06
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Publication No.: US11664085B2Publication Date: 2023-05-30
- Inventor: Samuel E. Bradshaw , Justin Eno
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: MICRON TECHNOLOGY, INC.
- Current Assignee: MICRON TECHNOLOGY, INC.
- Current Assignee Address: US ID Boise
- Agency: Nicholson De Vos Webster & Elliott LLP
- Main IPC: G06F11/00
- IPC: G06F11/00 ; G11C29/00 ; G11C13/00 ; G06F11/16 ; G11C29/52

Abstract:
Exemplary methods, apparatuses, and systems include determining that data in a group of memory cells of a first memory device is to be moved to a spare group of memory cells. The group of memory cells spans a first dimension and a second dimension that is orthogonal to the first dimension and the spare group of memory cells also spans the first dimension and the second dimension. The data is read from the group of memory cells along the first dimension of the group of memory cells. The data is written to the spare group of memory cells along the second dimension of the spare group of memory cells.
Public/Granted literature
- US20210335445A1 MANAGING DATA DISTURBANCE IN A MEMORY WITH ASYMMETRIC DISTURBANCE EFFECTS Public/Granted day:2021-10-28
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