Invention Grant
- Patent Title: Image sensor
-
Application No.: US17674045Application Date: 2022-02-17
-
Publication No.: US11665443B2Publication Date: 2023-05-30
- Inventor: Youngsun Oh , Hyungjin Bae , Moosup Lim
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si
- Agency: F. Chau & Associates, LLC
- Priority: KR 20210023691 2021.02.22
- Main IPC: H04N25/585
- IPC: H04N25/585 ; H04N25/75 ; H04N25/77

Abstract:
An image sensor including a pixel that includes: a first photodiode; a second photodiode having a larger light-receiving area than the first photodiode; a first floating diffusion node accumulating charges of the first photodiode; a second floating diffusion node accumulating charges of the second photodiode; a capacitor accumulating charges overflowing from the first photodiode; a first switch transistor having a first end connected to the first floating diffusion node and a second end connected to the capacitor; and a driving transistor configured to convert the accumulated charges into a pixel signal, the first switch transistor is turned on in a low conversion gain (LCG) mode of a readout section of the first photodiode, and is turned off in a high conversion gain (HCG) mode of the readout section of the first photodiode, and the readout circuit generates image data based on pixel signals from the first and second sections.
Public/Granted literature
- US20220272289A1 IMAGE SENSOR Public/Granted day:2022-08-25
Information query