公开(公告)号：US12075173B2

公开(公告)日：2024-08-27

申请号：US17782872

申请日：2020-12-08

Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATION

Inventor： Tomohiko Asatsuma ,  Ryosuke Nakamura ,  Satoko Iida ,  Koshi Okita

IPC: H04N25/621 ,  H01L27/146 ,  H04N25/585 ,  H04N25/59 ,  H04N25/702 ,  H04N25/77 ,  H04N25/778

CPC classification number: H04N25/621 ,  H04N25/702 ,  H04N25/77

Abstract: An imaging element according to an embodiment includes: a unit pixel including a first pixel having a first photoelectric conversion element and including a second pixel having a second photoelectric conversion element, the second pixel being arranged adjacent to the first pixel; and an accumulation portion that accumulates a charge generated by the second photoelectric conversion element and converts the accumulated charge into a voltage. The accumulation portion is disposed at a boundary between the unit pixel and another unit pixel adjacent to the unit pixel.

公开(公告)号：US12047700B2

公开(公告)日：2024-07-23

申请号：US18237160

申请日：2023-08-23

Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATION

Inventor： Takeshi Yanagita ,  Masaaki Takizawa ,  Yuuji Nishimura ,  Shinichi Arakawa ,  Yuugo Nakamura ,  Yohei Chiba

IPC: H04N25/75 ,  H01L27/146 ,  H04N25/585 ,  H04N25/65 ,  H04N25/778

CPC classification number: H04N25/75 ,  H01L27/14607 ,  H01L27/14609 ,  H01L27/14636 ,  H01L27/14645 ,  H04N25/585 ,  H04N25/65 ,  H04N25/778

Abstract: A pixel is included, the pixel including a photoelectric conversion portion configured to convert incident light to a charge by photoelectric conversion and accumulate the charge, a charge transfer unit configured to transfer the charge generated in the photoelectric conversion portion, a diffusion layer to which the charge is transferred through the charge transfer unit, the diffusion layer having a predetermined storage capacitance, a conversion unit configured to convert the charge transferred to the diffusion layer to a pixel signal, and connection wiring configured to connect the diffusion layer and the conversion unit. The connection wiring is connected to the diffusion layer and the conversion unit through contact wiring extending in a vertical direction with respect to a semiconductor substrate on which the diffusion layer is formed and is formed closer to the semiconductor substrate than other wiring provided in the pixel.

公开(公告)号：US20240236520A9

公开(公告)日：2024-07-11

申请号：US18224169

申请日：2023-07-20

Applicant: SHENZHEN ANTELAND TECHNOLOGY CO., LTD

Inventor： Naiqi CHEN ,  Gang CHEN

IPC: H04N25/585 ,  G06T3/40

CPC classification number: H04N25/585 ,  G06T3/40

Abstract: An image processing method, apparatus and a related device are provided. The method includes: step 1: setting a resolution of a first image to be exposed as a first resolution K1; step 2: obtaining multiple first offsets, each first offset corresponding to a respective pixel of the first image; step 3: processing the first image to obtain a second image with a greater resolution and setting a second resolution of the second image as K2; step 4, obtaining a third image; and step 5: obtaining a fourth image.

公开(公告)号：US11785357B2

公开(公告)日：2023-10-10

申请号：US17688617

申请日：2022-03-07

Applicant: SK hynix Inc.

Inventor： Dong Ho Ha

IPC: H04N25/585 ,  H04N25/46 ,  H04N25/709 ,  H04N25/71 ,  H04N25/772 ,  H04N25/778

CPC classification number: H04N25/585 ,  H04N25/46 ,  H04N25/709 ,  H04N25/745 ,  H04N25/772 ,  H04N25/778

Abstract: An image sensing device is provided to comprise: a pixel array of pixels that are operable to sense light to produce pixel signals and are operable to operate in one of a plurality of modes in sensing of light, wherein a first pixel of the pixel array is controlled to operate in a mode selected from the plurality of modes and configured to output a pixel signal in response to light incident onto the first pixel; and an analog-to-digital converter (ADC) coupled to the pixel array to receive the pixel signal from the first pixel and configured to set, based on the mode selected for the first pixel in generating the pixel signal, an input range indicating a voltage range of the pixel signal and perform an analog to digital conversion of the pixel signal generated by the first pixel to produce pixel data representing the pixel signal based on the input range of the analog-to-digital converter (ADC).

公开(公告)号：US11778349B2

公开(公告)日：2023-10-03

申请号：US17839772

申请日：2022-06-14

Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATION

Inventor： Takeshi Yanagita ,  Masaaki Takizawa ,  Yuuji Nishimura ,  Shinichi Arakawa ,  Yuugo Nakamura ,  Yohei Chiba

IPC: H04N25/75 ,  H01L27/146 ,  H04N25/65 ,  H04N25/585 ,  H04N25/778

CPC classification number: H04N25/75 ,  H01L27/14607 ,  H01L27/14609 ,  H01L27/14636 ,  H01L27/14645 ,  H04N25/585 ,  H04N25/65 ,  H04N25/778

Abstract: A pixel is included, the pixel including a photoelectric conversion portion configured to convert incident light to a charge by photoelectric conversion and accumulate the charge, a charge transfer unit configured to transfer the charge generated in the photoelectric conversion portion, a diffusion layer to which the charge is transferred through the charge transfer unit, the diffusion layer having a predetermined storage capacitance, a conversion unit configured to convert the charge transferred to the diffusion layer to a pixel signal, and connection wiring configured to connect the diffusion layer and the conversion unit. The connection wiring is connected to the diffusion layer and the conversion unit through contact wiring extending in a vertical direction with respect to a semiconductor substrate on which the diffusion layer is formed and is formed closer to the semiconductor substrate than other wiring provided in the pixel.

公开(公告)号：US11758297B2

公开(公告)日：2023-09-12

申请号：US17572236

申请日：2022-01-10

Applicant: Wisconsin Alumni Research Foundation

Inventor： Felipe Gutierrez Barragan ,  Yuhao Liu ,  Atul Ingle ,  Mohit Gupta ,  Andreas Velten

IPC: H04N25/585 ,  H01L27/146

CPC classification number: H04N25/585 ,  H01L27/14634 ,  H01L27/14645

Abstract: In accordance with some embodiments, systems, methods, and media for high dynamic range imaging using single-photon and conventional image sensor data are provided. In some embodiments, the system comprises: first detectors configured to detect a level of photons proportional to incident photon flux; second detectors configured to detect arrival of individual photons; a processor programmed to: receive, from the first detectors, first values indicative of photon flux from a scene with a first resolution; receive, from the second detectors, second values indicative of photon flux from the scene with a lower resolution; provide a first encoder of a trained machine learning model first flux values based on the first values, provide the second encoder of the model second flux values; receive, as output, values indicative of photon flux from the scene; and generate a high dynamic range image based on the third plurality of values.

公开(公告)号：US11751757B2

公开(公告)日：2023-09-12

申请号：US17391456

申请日：2021-08-02

Applicant: Depuy Synthes Products, Inc.

Inventor： Laurent Blanquart ,  John Richardson

IPC: A61B1/06 ,  H04N13/239 ,  H04N25/70 ,  H04N23/10 ,  H04N23/12 ,  H04N23/56 ,  H04N23/74 ,  H04N23/741 ,  H04N23/84 ,  H04N25/583 ,  H04N25/778 ,  A61B1/045 ,  H04N25/58 ,  H04N25/585

CPC classification number: A61B1/0605 ,  A61B1/045 ,  H04N13/239 ,  H04N23/10 ,  H04N23/12 ,  H04N23/56 ,  H04N23/74 ,  H04N23/741 ,  H04N23/843 ,  H04N25/583 ,  H04N25/70 ,  H04N25/778 ,  H04N25/58 ,  H04N25/585 ,  H04N2209/042

Abstract: The disclosure extends to methods, systems, and computer program products for widening dynamic range within an image in a light deficient environment.

公开(公告)号：US11743608B2

公开(公告)日：2023-08-29

申请号：US17371751

申请日：2021-07-09

Applicant: NIKON CORPORATION

Inventor： Shiro Tsunai

IPC: H04N25/57 ,  H01L27/146 ,  H04N25/71 ,  H04N25/75 ,  H04N25/79 ,  H04N25/533 ,  H04N25/585

CPC classification number: H04N25/57 ,  H01L27/1464 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14634 ,  H01L27/14636 ,  H01L27/14645 ,  H04N25/533 ,  H04N25/585 ,  H04N25/71 ,  H04N25/75 ,  H04N25/79

Abstract: When the amplification ratio is low and strong incident light causes a large charge, the signal retrieved from regions where the incident light is weak is also weak, but when the amplification ratio is high in regions where the incident light is weak, the signal retrieved from regions where the incident light is strong becomes saturated. Therefore, the dynamic range of the imaging unit is narrow. Provided is an imaging unit comprising an imaging section that includes a first group having one or more pixels and a second group having one or more pixels different from those of the first group; and a control section that, while a single charge accumulation is performed in the first group, causes pixel signals to be output by performing charge accumulation in the second group a number of times differing from a number of times charge accumulation is performed in the first group.

公开(公告)号：US20230239589A1

公开(公告)日：2023-07-27

申请号：US18191586

申请日：2023-03-28

Applicant: SONY GROUP CORPORATION

Inventor： DAISUKE MIYAKOSHI

IPC: H04N25/583 ,  G02B7/09 ,  H01L27/146 ,  H04N23/12 ,  H04N25/133 ,  H04N25/585 ,  H04N25/633 ,  H04N25/772

CPC classification number: H04N25/583 ,  G02B7/09 ,  H01L27/14605 ,  H04N23/12 ,  H04N25/133 ,  H04N25/585 ,  H04N25/633 ,  H04N25/772 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14627

Abstract: The present disclosure relates to a solid state image sensor and electronic equipment that enable degradation in image quality of a captured image to be suppressed even if any pixel in a pixel array is configured as a functional pixel for obtaining desired information in order to obtain information different from a normal image. In a plurality of pixels constituting subblocks provided in an RGB Bayer array constituting a block which is a set of color units, normal pixels that capture a normal image are arranged longitudinally and laterally symmetrically within the subblock, and functional pixels for obtaining desired information other than capturing an image are arranged at the remaining positions. The present disclosure can be applied to a solid state image sensor.

公开(公告)号：US12225310B2

公开(公告)日：2025-02-11

申请号：US18505019

申请日：2023-11-08

Applicant: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.

Inventor： Tokuhiko Tamaki

IPC: H04N25/75 ,  H01L27/146 ,  H04N23/54 ,  H04N23/55 ,  H04N25/585 ,  H04N25/702

Abstract: An image pickup module including an imaging device which includes: a first photoelectric converter that converts incident light into first signal charges; a first node into which the first signal charges are input; a second photoelectric converter that converts incident light into second signal charges; and a second node into which the second signal charges are input. The image pickup module further including a signal processing circuit that processes an output signal from the imaging device, where an area of the second photoelectric converter is greater than an area of the first photoelectric converter in a plan view, and capacitance of the first node is greater than capacitance of the second node.