Invention Grant
- Patent Title: Semiconductor device and method for fabricating the same
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Application No.: US17736069Application Date: 2022-05-03
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Publication No.: US11665973B2Publication Date: 2023-05-30
- Inventor: Hui-Lin Wang , Po-Kai Hsu , Hung-Yueh Chen , Yu-Ping Wang
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Hsin-Chu
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Hsin-Chu
- Agent Winston Hsu
- Priority: TW 8144115 2019.12.03
- The original application number of the division: US16732359 2020.01.02
- Main IPC: H10N50/01
- IPC: H10N50/01

Abstract:
A method for fabricating semiconductor device includes the steps of: forming a magnetic tunneling junction (MTJ) stack on a substrate; forming a top electrode on the MTJ stack; performing a first patterning process to remove the MTJ stack for forming a first MTJ; forming a first inter-metal dielectric (IMD) layer around the first MTJ; and performing a second patterning process to remove the first MTJ for forming a second MTJ and a third MTJ.
Public/Granted literature
- US20220263016A1 SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME Public/Granted day:2022-08-18
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