Invention Grant
- Patent Title: Memory system including field programmable gate array (FPGA) and method of operating same
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Application No.: US17499499Application Date: 2021-10-12
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Publication No.: US11669395B2Publication Date: 2023-06-06
- Inventor: Dong-Min Shin , Hong-Rak Son
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si
- Agency: Volentine, Whitt & Francos, PLLC
- Priority: KR 20180156277 2018.12.06
- Main IPC: G06F11/10
- IPC: G06F11/10 ; H03M13/09 ; H03M13/11 ; G06F7/58 ; G11C11/409 ; G11C29/52 ; G06F13/16

Abstract:
A memory system includes; a memory device, a memory controller including a first interface, a second interface, and a first data processor having a first error correction code (ECC) engine, and a field programmable gate array (FPGA) including a third interface connected to the first interface, a fourth interface connected to the second interface, a fifth interface connected to an external host, and a second data processor having a second ECC engine. The memory controller may configure a normal write operation path or highly reliable write operation path.
Public/Granted literature
- US20220035703A1 MEMORY SYSTEM INCLUDING FIELD PROGRAMMABLE GATE ARRAY (FPGA) AND METHOD OF OPERATING SAME Public/Granted day:2022-02-03
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