Invention Grant
- Patent Title: Etch bias characterization and method of using the same
-
Application No.: US16484582Application Date: 2018-02-21
-
Publication No.: US11675274B2Publication Date: 2023-06-13
- Inventor: Yongfa Fan , Leiwu Zheng , Mu Feng , Qian Zhao , Jen-Shiang Wang
- Applicant: ASML NETHERLANDS B.V.
- Applicant Address: NL Veldhoven
- Assignee: ASML NETHERLANDS B.V.
- Current Assignee: ASML NETHERLANDS B.V.
- Current Assignee Address: NL Veldhoven
- Agency: Pillsbury Winthrop Shaw Pittman LLP
- International Application: PCT/EP2018/054212 2018.02.21
- International Announcement: WO2018/153884A 2018.08.30
- Date entered country: 2019-08-08
- Main IPC: G03F7/20
- IPC: G03F7/20 ; G03F7/00 ; G03F1/80 ; H01L21/66

Abstract:
A method involving determining an etch bias for a pattern to be etched using an etch step of a patterning process based on an etch bias model, the etch bias model including a formula having a variable associated with a spatial property of the pattern or with an etch plasma species concentration of the etch step, and including a mathematical term including a natural exponential function to the power of a parameter that is fitted or based on an etch time of the etch step; and adjusting the patterning process based on the determined etch bias.
Public/Granted literature
- US20190354020A1 ETCH BIAS CHARACTERIZATION AND METHOD OF USING THE SAME Public/Granted day:2019-11-21
Information query
IPC分类: