公开(公告)号：US11314172B2

公开(公告)日：2022-04-26

申请号：US16977137

申请日：2019-03-07

Applicant: ASML NETHERLANDS B.V.

Inventor： Hongfei Shi ,  Jinze Wang ,  Pengcheng Yang ,  Lei Wang ,  Mu Feng

IPC: G03F7/20

Abstract: A method for accelerating calibration of a fabrication process model, the method including performing one or more iterations of: defining one or more fabrication process model terms; receiving predetermined information related to the one or more fabrication process model terms; generating a fabrication process model based on the predetermined information, the fabrication process model configured to generate one or more predictions related to a metrology gauge; determining whether a prediction related to a dimension of a gauge is within a predetermined threshold of the gauge as measured on a post-fabrication process substrate; and responsive to the prediction not breaching the predetermined threshold, optimizing the one or more fabrication process terms such that the prediction related to the dimension of the gauge is within the predetermined threshold of the gauge as measured on the post-fabrication process substrate.

公开(公告)号：US11567413B2

公开(公告)日：2023-01-31

申请号：US17430517

申请日：2020-01-30

Applicant: ASML NETHERLANDS B.V.

Inventor： Chang An Wang ,  Alvin Jianjiang Wang ,  Jiao Liang ,  Jen-Shiang Wang ,  Mu Feng

IPC: G03F7/20

Abstract: A method for determining measurement data of a printed pattern on a substrate. The method involves obtaining (i) images of the substrate including a printed pattern corresponding to a reference pattern, (ii) an averaged image of the images, and (iii) a composite contour based on the averaged image. Further, the composite contour is aligned with respect to a reference contour of the reference pattern and contours are extracted from the images based on both the aligned composite contour and the output of die-to-database alignment of the composite contour. Further, the method determines a plurality of pattern measurements based on the contours and the measurement data corresponding to the printed patterns based on the plurality of the pattern measurements. Further, the method determines a one or more process variations such as stochastic variation, inter-die variation, intra-die variation and/or total variation.

公开(公告)号：US11977336B2

公开(公告)日：2024-05-07

申请号：US17059771

申请日：2019-05-14

Applicant: ASML NETHERLANDS B.V.

Inventor： Jen-Shiang Wang ,  Qian Zhao ,  Yunbo Guo ,  Yen-Wen Lu ,  Mu Feng ,  Qiang Zhang

IPC: G03F7/00

CPC classification number: G03F7/705 ,  G03F7/70441 ,  G03F7/70625 ,  G03F7/70655 ,  G03F7/706837

Abstract: A method for improving a process model for a patterning process, the method including obtaining a) a measured contour from an image capture device, and b) a simulated contour generated from a simulation of the process model. The method also includes aligning the measured contour with the simulated contour by determining an offset between the measured contour and the simulated contour. The process model is calibrated to reduce a difference, computed based on the determined offset, between the simulated contour and the measured contour.

公开(公告)号：US11675274B2

公开(公告)日：2023-06-13

申请号：US16484582

申请日：2018-02-21

Applicant: ASML NETHERLANDS B.V.

Inventor： Yongfa Fan ,  Leiwu Zheng ,  Mu Feng ,  Qian Zhao ,  Jen-Shiang Wang

IPC: G03F7/20 ,  G03F7/00 ,  G03F1/80 ,  H01L21/66

CPC classification number: G03F7/705 ,  G03F1/80 ,  G03F7/70625 ,  H01L22/34

Abstract: A method involving determining an etch bias for a pattern to be etched using an etch step of a patterning process based on an etch bias model, the etch bias model including a formula having a variable associated with a spatial property of the pattern or with an etch plasma species concentration of the etch step, and including a mathematical term including a natural exponential function to the power of a parameter that is fitted or based on an etch time of the etch step; and adjusting the patterning process based on the determined etch bias.

公开(公告)号：US11614690B2

公开(公告)日：2023-03-28

申请号：US16478489

申请日：2018-01-24

Applicant: ASML NETHERLANDS B.V.

Inventor： Mu Feng ,  Mir Farrokh Shayegan Salek ,  Dianwen Zhu ,  Leiwu Zheng ,  Rafael C. Howell ,  Jen-Shiang Wang

IPC: G05B19/418 ,  G03F7/20

Abstract: Methods of constructing a process model for simulating a characteristic of a product of lithography from patterns produced under different processing conditions. The methods use a deviation between the variation of the simulated characteristic and the variation of the measured characteristic to adjust a parameter of the process model.