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公开(公告)号：US20230185990A1
公开(公告)日：2023-06-15
申请号：US18095515
申请日：2023-01-10
Applicant: ASML NETHERLANDS B.V.
Inventor： Lotte Marloes Willems , Kaustuve Bhattacharyya , Panagiotis Pieter Bintevinos , Guangqing Chen , Martin Ebert , Pieter Jacob Mathias Hendrik Knelissen , Stephen Morgan , Maurits Van Der Schaar , Leonardus Henricus Marie Verstappen , Jen-Shiang Wang , Peter Hanzen Wardenier
CPC classification number: G06F30/20 , G03F7/705 , G03F7/70625 , G03F7/70683 , G03F7/70633 , G03F9/7046 , G06F2111/10
Abstract: A method including performing a simulation to evaluate a plurality of metrology targets and/or a plurality of metrology recipes used to measure a metrology target, identifying one or more metrology targets and/or metrology recipes from the evaluated plurality of metrology targets and/or metrology recipes, receiving measurement data of the one or more identified metrology targets and/or metrology recipes, and using the measurement data to tune a metrology target parameter or metrology recipe parameter.
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2.发明授权公开(公告)号：US12182983B2
公开(公告)日：2024-12-31
申请号：US17268128
申请日：2019-07-26
Applicant: ASML NETHERLANDS B.V.
Inventor： Chen Zhang , Qiang Zhang , Jen-Shiang Wang , Jiao Liang
IPC: G06T7/00 , G01N23/2251 , G03F7/00
Abstract: A method for evaluating images of a printed pattern. The method includes obtaining a first averaged image of the printed pattern, where the first averaged image is generated by averaging raw images of the printed pattern. The method also includes identifying one or more features of the first averaged image. The method further includes evaluating the first averaged image, using an image quality classification model and based at least on the one or more features. The evaluating includes determining, by the image quality classification model, whether the first averaged image satisfies a metric.
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公开(公告)号：US11567413B2
公开(公告)日：2023-01-31
申请号：US17430517
申请日：2020-01-30
Applicant: ASML NETHERLANDS B.V.
Inventor： Chang An Wang , Alvin Jianjiang Wang , Jiao Liang , Jen-Shiang Wang , Mu Feng
IPC: G03F7/20
Abstract: A method for determining measurement data of a printed pattern on a substrate. The method involves obtaining (i) images of the substrate including a printed pattern corresponding to a reference pattern, (ii) an averaged image of the images, and (iii) a composite contour based on the averaged image. Further, the composite contour is aligned with respect to a reference contour of the reference pattern and contours are extracted from the images based on both the aligned composite contour and the output of die-to-database alignment of the composite contour. Further, the method determines a plurality of pattern measurements based on the contours and the measurement data corresponding to the printed patterns based on the plurality of the pattern measurements. Further, the method determines a one or more process variations such as stochastic variation, inter-die variation, intra-die variation and/or total variation.
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公开(公告)号：US09355200B2
公开(公告)日：2016-05-31
申请号：US14577820
申请日：2014-12-19
Applicant: ASML NETHERLANDS B.V.
Inventor： Guangqing Chen , Eric Richard Kent , Jen-Shiang Wang , Omer Abubaker Omer Adam
CPC classification number: G03F7/706 , G03F7/70625 , G03F7/70633 , G03F7/70641 , G03F7/70683 , G06F17/5009 , G06F17/5068 , G06F2217/12 , G06F2217/14
Abstract: A method of metrology target design is described. The method includes determining a sensitivity of a parameter for a metrology target design to an optical aberration, determining the parameter for a product design exposed using an optical system of a lithographic apparatus, and determining an impact on the parameter of the metrology target design based on the parameter for the product design and the product of the sensitivity and one or more of the respective aberrations of the optical system.
Abstract translation: 描述了一种计量目标设计方法。 该方法包括确定用于度量目标设计的参数对光学像差的灵敏度，确定使用光刻设备的光学系统暴露的产品设计的参数，以及基于以下方式确定对度量目标设计的参数的影响： 产品设计的参数和灵敏度的乘积以及光学系统的各个像差中的一个或多个。
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公开(公告)号：US10948831B2
公开(公告)日：2021-03-16
申请号：US16484186
申请日：2018-02-20
Applicant: ASML NETHERLANDS B.V.
Inventor： Ya Luo , Yu Cao , Jen-Shiang Wang , Yen-Wen Lu
Abstract: Methods of determining, and using, a patterning process model that is a machine learning model. The process model is trained partially based on simulation or based on a non-machine learning model. The training data may include inputs obtained from a design layout, patterning process measurements, and image measurements.
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Patent Agency Ranking
公开(公告)号：US20180268093A1
公开(公告)日：2018-09-20
申请号：US15982933
申请日：2018-05-17
Applicant: ASML Netherlands B.V.
Inventor： Guangqing CHEN , Shufeng Bai , Eric Richard Kent , Yen-Wen Lu , Paul Anthony Tuffy , Jen-Shiang Wang , Youping Zhang , Gertjan Zwartjes , Jan Wouter Bijlsma
CPC classification number: G06F17/5009 , G03F7/705 , G03F7/70633 , G03F7/70683 , G06F17/12 , G06F17/14 , G06F2217/12 , G06F2217/14
Abstract: Methods and systems for automatically generating robust metrology targets which can accommodate a variety of lithography processes and process perturbations. Individual steps of an overall lithography process are modeled into a single process sequence to simulate the physical substrate processing. That process sequence drives the creation of a three-dimensional device geometry as a whole, rather than “building” the device geometry element-by-element.
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公开(公告)号：US09903823B2
公开(公告)日：2018-02-27
申请号：US14945257
申请日：2015-11-18
Applicant: ASML NETHERLANDS B.V.
Inventor： Yen-Wen Lu , Jay Jianhui Chen , Wei Liu , Boris Menchtchikov , Jen-Shiang Wang , Te-Chih Huang
CPC classification number: G01N21/8806 , G01B11/272 , G01N21/9501 , G01N2021/8822 , G03F7/70516 , G03F7/70633 , G03F7/70683
Abstract: A method to determine an overlay error between a first structure and a second structure, wherein the first structure and second structures are on different layers on a substrate and are imaged onto the substrate by a lithographic process, the method comprising: obtaining an apparent overlay error; obtaining a systematic error caused by a factor other than misalignment of the first and second structures; and determining the overlay error by removing the systematic error from the apparent overlay error. The method may alternatively comprise obtaining apparent characteristics of diffraction orders of diffraction by an overlapping portion of the first and second structures; obtaining corrected characteristics of the diffraction orders; determining the overlay error from the corrected characteristics; and adjusting a characteristic of the lithographic process based on the overlay error.
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公开(公告)号：US09804504B2
公开(公告)日：2017-10-31
申请号：US15154456
申请日：2016-05-13
Applicant: ASML NETHERLANDS B.V.
Inventor： Guangqing Chen , Eric Richard Kent , Jen-Shiang Wang , Omer Abubaker Omer Adam
CPC classification number: G03F7/706 , G03F7/70625 , G03F7/70633 , G03F7/70641 , G03F7/70683 , G06F17/5009 , G06F17/5068 , G06F2217/12 , G06F2217/14
Abstract: A method of metrology target design is described. The method includes determining a sensitivity of a parameter for a metrology target design to an optical aberration, determining the parameter for a product design exposed using an optical system of a lithographic apparatus, and determining an impact on the parameter of the metrology target design based on the parameter for the product design and the product of the sensitivity and one or more of the respective aberrations of the optical system.
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公开(公告)号：US12204826B2
公开(公告)日：2025-01-21
申请号：US18095515
申请日：2023-01-10
Applicant: ASML NETHERLANDS B.V.
Inventor： Lotte Marloes Willems , Kaustuve Bhattacharyya , Panagiotis Pieter Bintevinos , Guangqing Chen , Martin Ebert , Pieter Jacob Mathias Hendrik Knelissen , Stephen Morgan , Maurits Van Der Schaar , Leonardus Henricus Marie Verstappen , Jen-Shiang Wang , Peter Hanzen Wardenier
IPC: G03F7/00 , G03F9/00 , G06F30/20 , G06F111/10
Abstract: A method including performing a simulation to evaluate a plurality of metrology targets and/or a plurality of metrology recipes used to measure a metrology target, identifying one or more metrology targets and/or metrology recipes from the evaluated plurality of metrology targets and/or metrology recipes, receiving measurement data of the one or more identified metrology targets and/or metrology recipes, and using the measurement data to tune a metrology target parameter or metrology recipe parameter.
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公开(公告)号：US11580274B2
公开(公告)日：2023-02-14
申请号：US15559759
申请日：2016-03-24
Applicant: ASML Netherlands B.V.
Inventor： Lotte Marloes Willems , Kaustuve Bhattacharyya , Panagiotis Pieter Bintevinos , Guangqing Chen , Martin Ebert , Pieter Jacob Mathias Hendrik Knelissen , Stephen Morgan , Maurits Van Der Schaar , Leonardus Henricus Marie Verstappen , Jen-Shiang Wang , Peter Hanzen Wardenier
IPC: G03F7/20 , G06F30/20 , G03F9/00 , G06F111/10
Abstract: A method including performing a simulation to evaluate a plurality of metrology targets and/or a plurality of metrology recipes used to measure a metrology target, identifying one or more metrology targets and/or metrology recipes from the evaluated plurality of metrology targets and/or metrology recipes, receiving measurement data of the one or more identified metrology targets and/or metrology recipes, and using the measurement data to tune a metrology target parameter or metrology recipe parameter.
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