公开(公告)号：US11675274B2

公开(公告)日：2023-06-13

申请号：US16484582

申请日：2018-02-21

Applicant: ASML NETHERLANDS B.V.

Inventor： Yongfa Fan ,  Leiwu Zheng ,  Mu Feng ,  Qian Zhao ,  Jen-Shiang Wang

IPC: G03F7/20 ,  G03F7/00 ,  G03F1/80 ,  H01L21/66

CPC classification number: G03F7/705 ,  G03F1/80 ,  G03F7/70625 ,  H01L22/34

Abstract: A method involving determining an etch bias for a pattern to be etched using an etch step of a patterning process based on an etch bias model, the etch bias model including a formula having a variable associated with a spatial property of the pattern or with an etch plasma species concentration of the etch step, and including a mathematical term including a natural exponential function to the power of a parameter that is fitted or based on an etch time of the etch step; and adjusting the patterning process based on the determined etch bias.