Invention Grant
- Patent Title: Contact conductive feature formation and structure
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Application No.: US17372671Application Date: 2021-07-12
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Publication No.: US11676859B2Publication Date: 2023-06-13
- Inventor: Ken-Yu Chang , Chun-I Tsai , Ming-Hsing Tsai , Wei-Jung Lin
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Slater Matsil, LLP
- Main IPC: H01L21/768
- IPC: H01L21/768 ; H01L29/66 ; H01L21/8234 ; H01L21/67

Abstract:
Generally, the present disclosure provides example embodiments relating to conductive features, such as metal contacts, vias, lines, etc., and methods for forming those conductive features. In an embodiment, a barrier layer is formed along a sidewall. A portion of the barrier layer along the sidewall is etched back by a wet etching process. After etching back the portion of the barrier layer, an underlying dielectric welding layer is exposed. A conductive material is formed along the barrier layer.
Public/Granted literature
- US20210343590A1 Contact Conductive Feature Formation and Structure Public/Granted day:2021-11-04
Information query
IPC分类: