Invention Grant
- Patent Title: Method to enable 30 microns pitch EMIB or below
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Application No.: US17364686Application Date: 2021-06-30
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Publication No.: US11676891B2Publication Date: 2023-06-13
- Inventor: Hongxia Feng , Dingying David Xu , Sheng C. Li , Matthew L. Tingey , Meizi Jiao , Chung Kwang Christopher Tan
- Applicant: Intel Corporation
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Schwabe, Williamson & Wyatt, P.C.
- The original application number of the division: US15654399 2017.07.19
- Main IPC: H01L23/498
- IPC: H01L23/498 ; H01L23/13 ; H01L21/48 ; H01L23/538

Abstract:
A package substrate and package assembly including a package substrate including a substrate body including electrical routing features therein and a surface layer and a plurality of first and second contact points on the surface layer including a first pitch and a second pitch, respectively, wherein the plurality of first contact points and the plurality of second contact points are continuous posts to the respective ones of the electrical routing features. A method including forming first conductive vias in a package assembly, wherein the first conductive vias include substrate conductive vias to electrical routing features in a package substrate and bridge conductive vias to bridge surface routing features of a bridge substrate; forming a first surface layer and a second surface layer on the package substrate; and forming second conductive vias through each of the first surface layer and the second surface layer to the bridge conductive vias.
Public/Granted literature
- US20210327800A1 NEW METHOD TO ENABLE 30 MICRONS PITCH EMIB OR BELOW Public/Granted day:2021-10-21
Information query
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