- 专利标题： Strained channel field effect transistor
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申请号： US15686716申请日： 2017-08-25
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公开(公告)号： US11677004B2公开(公告)日： 2023-06-13
- 发明人: Mark Van Dal , Gerben Doornbos , Georgios Vellianitis , Tsung-Lin Lee , Feng Yuan
- 申请人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 申请人地址： TW Hsin-Chu
- 专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人地址： TW Hsinchu
- 代理机构： Haynes and Boone, LLP
- 分案原申请号： US13161649 2011.06.16
- 主分类号： H01L29/10
- IPC分类号： H01L29/10 ; H01L21/8238 ; H01L27/092 ; H01L29/66 ; H01L29/78 ; H01L29/165
摘要：
Various strained channel transistors are disclosed herein. An exemplary semiconductor device includes a substrate and a fin structure disposed over the substrate. The fin structure includes a first epitaxial layer disposed on the substrate, a second epitaxial layer disposed on the first epitaxial layer, and a third epitaxial layer disposed on the second epitaxial layer. The second epitaxial layer includes a relaxed transversal stress component and a longitudinal compressive stress component, and the third epitaxial layer has uni-axial strain. A gate structure is disposed on a channel region of the fin structure, such that the gate structure interposes a source region and a drain region of the fin structure.
公开/授权文献
- US20170358648A1 Strained Channel Field Effect Transistor 公开/授权日：2017-12-14
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