- Patent Title: Copper deposition in wafer level packaging of integrated circuits
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Application No.: US17400633Application Date: 2021-08-12
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Publication No.: US11697884B2Publication Date: 2023-07-11
- Inventor: Thomas Richardson , Kyle Whitten , Vincent Paneccasio, Jr. , John Commander , Richard Hurtubise
- Applicant: MacDermid Enthone Inc.
- Applicant Address: US CT Waterbury
- Assignee: MacDermid Enthone Inc.
- Current Assignee: MacDermid Enthone Inc.
- Current Assignee Address: US CT Waterbury
- Agency: Carmody Torrance Sandak & Hennessey LLP
- Main IPC: C25D3/38
- IPC: C25D3/38 ; C08G65/24 ; C08G65/333 ; C08G73/06 ; H01L23/00 ; C25D7/12

Abstract:
An electrodeposition composition comprising: (a) a source of copper ions; (b) an acid; (c) a suppressor; and (d) a leveler, wherein the leveler comprises a quaternized dipyridyl compound prepared by reacting a dipyridyl compound with a difunctional alkylating agent or a quaternized poly(epihalohydrin). The electrodeposition composition can be used in a process for forming a copper feature over a semiconductor substrate in wafer level packaging to electrodeposit a copper bump or pillar on an underbump structure of a semiconductor assembly.
Public/Granted literature
- US20210388519A1 Copper Deposition in Wafer Level Packaging of Integrated Circuits Public/Granted day:2021-12-16
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