公开(公告)号：US20240318342A1

公开(公告)日：2024-09-26

申请号：US18578049

申请日：2022-07-25

Applicant: MacDermid Enthone Inc.

Inventor： Jianwen Han ,  Pingping Ye ,  Kyle M Whitten ,  Stephan I. Braye ,  Thomas B. Richardson ,  Elie H. Najjar

IPC: C25D3/38 ,  C25D5/00 ,  C25D7/12 ,  C30B7/12 ,  C30B29/02 ,  C30B29/60

CPC classification number: C25D3/38 ,  C25D5/617 ,  C25D7/12 ,  C30B7/12 ,  C30B29/02 ,  C30B29/605

Abstract: A copper electrolyte comprising a copper salt, a source of halide ions, and a linear or branched polyhydroxyl. The copper electrolyte is used to deposit copper having a high density of nanotwinned columnar copper grains on a substrate. The linear or branched polyhydroxy] may comprise a reaction product between 2,3-epoxy-1-propanol and an amine compound. A leveler comprising a polymeric quaternary nitrogen species and/or an accelerator comprising an organic sulfur compound may also be added to the copper electrolyte so long as the nanotwinned columnar copper grains are maintained.

公开(公告)号：US20240224432A1

公开(公告)日：2024-07-04

申请号：US18289075

申请日：2022-05-10

Applicant: MacDermid Enthone Inc.

Inventor： Donald Desalvo ,  Ron Blake ,  Carmichael Gugliotti ,  William J. Decesare ,  Richard A. Bellemare

IPC: H05K3/42 ,  C25D3/38 ,  C25D5/18 ,  C25D7/00 ,  H05K1/11

CPC classification number: H05K3/424 ,  C25D3/38 ,  C25D5/18 ,  C25D7/00 ,  H05K1/115 ,  H05K2201/09563 ,  H05K2203/0723

Abstract: A method of copper electroplating in the manufacture of printed circuit boards. The method is used for filling through-holes and micro-vias with copper. The method includes the steps of: (1) preparing an electronic substrate to receive copper electroplating thereon; (2) forming at least one of one or more through-holes and/or one or more micro-vias in the electronic substrate; and (3) electroplating copper in the at least one or more through-holes and/or one or more blind micro-vias by contacting the electronic substrate with an acid copper electrolyte. The acid copper electrolyte is used to plate the one or more through-holes and/or the one or more blind micro-vias. A first pulse reverse plating waveform sequence is used to create a copper bridge in the center of the through-holes followed by direct plating until metallization is complete.

公开(公告)号：US20240110306A1

公开(公告)日：2024-04-04

申请号：US18534819

申请日：2023-12-11

Applicant: MacDermid Enthone Inc.

Inventor： Kyle M. Whitten ,  Stephan I. Braye ,  Jianwen Han ,  Pingping Ye ,  Thomas B. Richardson ,  Elie H. Najjar

IPC: C25D3/38 ,  C25D5/00

CPC classification number: C25D3/38 ,  C25D5/605 ,  B82Y40/00

Abstract: A copper electroplating solution comprising a copper salt, a source of halide ions, and a linear or branched polyhydroxyl. The copper electroplating solution is used to deposit copper having a high density of nanotwinned columnar copper grains on a substrate. The linear or branched polyhydroxyl may comprise a reaction product between 2,3-epoxy-1-propanol and aminic alcohol or ammonium alcohol.

公开(公告)号：US20210180200A1

公开(公告)日：2021-06-17

申请号：US16713871

申请日：2019-12-13

Applicant: MacDermid Enthone Inc.

Inventor： Shaopeng Sun ,  Kyle Whitten ,  Stephan Braye ,  Elie Najjar

IPC: C25D3/16 ,  C25D5/18 ,  C25D5/02

Abstract: An electroplated cobalt deposit and a method of electrodepositing cobalt on a surface to produce a level deposit across the surface of the substrate. The cobalt electrolyte contains (1) a source of cobalt ions; (2) boric acid; (3) a pH adjuster; and (4) an organic additive, which contains a suppressor. The electroplated cobalt deposit exhibits a level surface such that the thickness difference across substantially the entire surface of the substrate of less than about 200 nm.

公开(公告)号：US10995417B2

公开(公告)日：2021-05-04

申请号：US15739314

申请日：2016-06-30

Applicant: MacDermid Enthone Inc.

Inventor： John Commander ,  Vincent Paneccasio, Jr. ,  Eric Rouya ,  Kyle Whitten ,  Shaopeng Sun ,  Jianwen Han

IPC: C25D3/16 ,  C25D7/12 ,  C25D3/56 ,  C25D5/18

Abstract: Processes and compositions for electroplating a cobalt deposit onto a semiconductor base structure comprising submicron-sized electrical interconnect features. In the process, a metalizing substrate within the interconnect features is contacted with an electrodeposition composition comprising a source of cobalt ions, an accelerator comprising an organic sulfur compound, an acetylenic suppressor, a buffering agent and water. Electrical current is supplied to the electrolytic composition to deposit cobalt onto the base structure and fill the submicron-sized features with cobalt. The process is effective for superfilling the interconnect features.

公开(公告)号：US10544516B2

公开(公告)日：2020-01-28

申请号：US15762599

申请日：2016-09-23

Applicant: MacDermid Enthone Inc.

Inventor： Andreas Konigshofen ,  Maik Winkler

IPC: C25D21/06 ,  C25D3/06 ,  C25D3/10 ,  C25D21/12

Abstract: The invention relates to a method for the adjustment of the lightness L* of electrolytically deposited chromium-finishes on workpieces obtained by an electroplating bath comprising at least chromium(III)-ions and sulfur containing organic compounds, wherein the concentration of the sulfur containing organic compounds in the bath are adjusted by passing at least part of the bath composition through an activated carbon filter. Furthermore, the invention is directed to dark chrome coatings comprising a defined concentration gradient of deposited sulfur containing organic compounds.

公开(公告)号：US10508207B2

公开(公告)日：2019-12-17

申请号：US15545208

申请日：2016-01-20

Applicant: MacDermid Enthone Inc.

Inventor： Christian Rietmann ,  Andreas Glöckner

IPC: C09D5/44 ,  C25D5/56 ,  H05K3/42 ,  C25D3/38 ,  C25D5/02

Abstract: The invention relates to a composition and a process for the deposition of conductive polymers on dielectric substrates. In particular, the invention relates to a composition for the formation of electrically conductive polymers on the surface of a dielectric substrate, the composition comprising at least one polymerizable monomer which is capable to form a conductive polymer, an emulsifier and an acid, characterized in that the composition comprises at least one metal-ion selected from the group consisting of lithium-ions, sodium-ions, aluminum-ions, beryllium-ions, bismuth-ions, boron-ions, indium-ions and alkyl imidazolium-ions. The acid is typically a high molecular weight polymeric acid having molecular weight of at least 500,000 Da including, for example, polystyrene sulfonic acid having a molecular weight of approximately 1,000,000 Da.

公开(公告)号：US20180044813A1

公开(公告)日：2018-02-15

申请号：US15551052

申请日：2016-02-23

Applicant: MACDERMID ENTHONE, INC.

Inventor： Frank Noffke ,  Andreas Konigshofen ,  Axel Fuhrmann ,  Christoph Werner

IPC: C25D21/11 ,  C09K15/26 ,  C08J7/06 ,  C25D5/56 ,  C25D5/34 ,  C23C18/38 ,  C23C18/16 ,  C23C18/20 ,  C23C18/22 ,  C23C18/30 ,  C23C18/32 ,  C09K15/30 ,  C25D17/08

CPC classification number: C25D21/11 ,  C08J7/02 ,  C08J7/06 ,  C08J7/065 ,  C09K15/26 ,  C09K15/30 ,  C23C18/1625 ,  C23C18/1653 ,  C23C18/2086 ,  C23C18/22 ,  C23C18/30 ,  C23C18/32 ,  C23C18/38 ,  C25D5/34 ,  C25D5/56 ,  C25D17/08

Abstract: The invention relates to an aqueous inhibition composition for the inhibition of electrochemical metal plating on polymer surfaces, said inhibition composition comprising an inhibition agent selected from the group of compounds having at least one sulfur and at least one nitrogen atom as well as to a method for the inhibition of an insulated surface of a rack area. The inventive inhibition composition is capable to provide a solution for prohibiting unintended metallization on insulated areas of the racks when non-chromic etching is utilized for plating on plastics processes.

公开(公告)号：US20230407467A1

公开(公告)日：2023-12-21

申请号：US18242599

申请日：2023-09-06

Applicant: MacDermid Enthone Inc.

Inventor： Richard W. Hurtubise ,  Eric Yakobson ,  Shaopeng Sun ,  Taylor L. Wilkins ,  Elie H. Najjar ,  Wenbo Shao

IPC: C23C16/40 ,  C23C16/02 ,  C23C14/08 ,  C23C14/02 ,  C25D3/00

CPC classification number: C23C16/403 ,  C23C16/02 ,  C23C14/081 ,  C23C14/02 ,  C25D3/00

Abstract: A method of forming a diffusion barrier layer on a dielectric or semiconductor substrate by a wet process. The method includes the steps of treating the dielectric or semiconductor substrate with an aqueous pretreatment solution comprising one or more adsorption promoting ingredients capable of preparing the substrate for deposition of the diffusion barrier layer thereon; and contacting the treated dielectric or semiconductor substrate with a deposition solution comprising manganese compounds and an inorganic pH buffer (optionally, with one or more doping metals) to the diffusion barrier layer thereon, wherein the diffusion barrier layer comprises manganese oxide. Also included is a two-part kit for treating a dielectric or semiconductor substrate to form a diffusion barrier layer thereon.

公开(公告)号：US20230335496A1

公开(公告)日：2023-10-19

申请号：US18030158

申请日：2021-10-08

Applicant: MacDermid Enthone Inc.

Inventor： Frédéric RAYNAL ,  Vincent MEVELLEC ,  Mikailou THIAM ,  Amine LAKHDARI

IPC: H01L23/532 ,  H01L21/768 ,  H10B43/27

CPC classification number: H01L23/53238 ,  H01L21/76843 ,  H01L21/76877 ,  H10B43/27

Abstract: The invention relates to a process for fabricating a 3D-NAND flash memory comprising a first step of electrodepositing an alloy of copper and of a dopant metal selected from manganese and zinc followed by a second step of annealing the alloy to form a first layer of copper and a second layer comprising zinc or manganese, by demixing the alloy.