公开(公告)号：US20210388519A1

公开(公告)日：2021-12-16

申请号：US17400633

申请日：2021-08-12

Applicant: MacDermid Enthone Inc.

Inventor： Thomas Richardson ,  Kyle Whitten ,  Vincent Paneccasio, JR. ,  John Commander ,  Richard Hurtubise

IPC: C25D3/38 ,  C08G65/24 ,  C08G65/333 ,  C08G73/06 ,  H01L23/00

Abstract: An electrodeposition composition comprising: (a) a source of copper ions; (b) an acid; (c) a suppressor; and (d) a leveler, wherein the leveler comprises a quaternized dipyridyl compound prepared by reacting a dipyridyl compound with a difunctional alkylating agent or a quaternized poly(epihalohydrin). The electrodeposition composition can be used in a process for forming a copper feature over a semiconductor substrate in wafer level packaging to electrodeposit a copper bump or pillar on an underbump structure of a semiconductor assembly.

公开(公告)号：US20240018678A1

公开(公告)日：2024-01-18

申请号：US18372236

申请日：2023-09-25

Applicant: MacDermid Enthone Inc.

Inventor： Vincent Paneccasio, JR. ,  Kyle Whitten ,  Richard Hurtubise ,  John Commander ,  Eric Rouya

IPC: C25D3/38 ,  C25D7/12 ,  C25D17/00

CPC classification number: C25D3/38 ,  C25D7/123 ,  C25D17/001 ,  H01L21/2885

Abstract: An electrolytic plating composition for superfilling submicron features in a semiconductor integrated circuit device and a method of using the same. The composition comprises (a) a source of copper ions to electrolytically deposit copper onto the substrate and into the electrical interconnect features, and (b) a suppressor comprising at least three amine sites, said polyether comprising a block copolymer substituent comprising propylene oxide (PO) repeat units and ethylene oxide (EO) repeat units, wherein the number average molecular weight of the suppressor compound is between about 1,000 and about 20,000.

公开(公告)号：US11697884B2

公开(公告)日：2023-07-11

申请号：US17400633

申请日：2021-08-12

Applicant: MacDermid Enthone Inc.

Inventor： Thomas Richardson ,  Kyle Whitten ,  Vincent Paneccasio, Jr. ,  John Commander ,  Richard Hurtubise

IPC: C25D3/38 ,  C08G65/24 ,  C08G65/333 ,  C08G73/06 ,  H01L23/00 ,  C25D7/12

CPC classification number: C25D3/38 ,  C08G65/24 ,  C08G65/33317 ,  C08G73/0627 ,  H01L24/11 ,  C25D7/123 ,  H01L2224/11462 ,  H01L2924/01029 ,  H01L2924/3656

Abstract: An electrodeposition composition comprising: (a) a source of copper ions; (b) an acid; (c) a suppressor; and (d) a leveler, wherein the leveler comprises a quaternized dipyridyl compound prepared by reacting a dipyridyl compound with a difunctional alkylating agent or a quaternized poly(epihalohydrin). The electrodeposition composition can be used in a process for forming a copper feature over a semiconductor substrate in wafer level packaging to electrodeposit a copper bump or pillar on an underbump structure of a semiconductor assembly.

公开(公告)号：USRE49202E1

公开(公告)日：2022-09-06

申请号：US16030344

申请日：2018-07-09

Applicant: MacDermid Enthone Inc.

Inventor： Vincent Paneccasio, Jr. ,  Xuan Lin ,  Paul Figura ,  Richard Hurtubise

IPC: H01L21/4763 ,  H01L21/288 ,  C25D3/38 ,  C25D7/12 ,  H01L21/768

Abstract: An electrolytic plating method and composition for electrolytically plating Cu onto a semiconductor integrated circuit substrate having submicron-sized interconnect features. The composition comprises a source of Cu ions and a suppressor compound comprising polyether groups. The method involves superfilling by rapid bottom-up deposition at a superfill speed by which Cu deposition in a vertical direction from the bottoms of the features to the top openings of the features is substantially greater than Cu deposition on the side walls.

公开(公告)号：US11124888B2

公开(公告)日：2021-09-21

申请号：US16334098

申请日：2017-09-20

Applicant: MacDermid Enthone Inc.

Inventor： Thomas Richardson ,  Kyle Whitten ,  Vincent Paneccasio, Jr. ,  John Commander ,  Richard Hurtubise

IPC: C25D3/38 ,  C25D7/12 ,  C08G65/24 ,  C08G65/333 ,  C08G73/06 ,  H01L23/00

Abstract: An electrodeposition composition comprising: (a) a source of copper ions; (b) an acid; (c) a suppressor, and (d) a leveler, wherein the leveler comprises a quaternized dipyridyl compound prepared by reacting a dipyridyl compound with a difunctional alkylating agent or a quaternized poly(epihalohydrin). The electrodeposition composition can be used in a process for forming a copper feature over a semiconductor substrate in wafer level packaging to electrodeposit a copper bump or pillar on an underbump structure of a semiconductor assembly.

公开(公告)号：US20190390356A1

公开(公告)日：2019-12-26

申请号：US16334168

申请日：2017-09-21

Applicant: MacDermid Enthone Inc.

Inventor： Vincent Paneccasio, Jr. ,  Kyle Whitten ,  Richard Hurtubise ,  John Commander ,  Eric Rouya

IPC: C25D3/38 ,  C25D7/12 ,  C25D17/00

Abstract: An electrolytic plating composition for superfilling submicron features in a semiconductor integrated circuit device and a method of using the same. The composition comprises (a) a source of copper ions to electrolytically deposit copper onto the substrate and into the electrical interconnect features, and (b) a suppressor comprising at least three amine sites, said polyether comprising a block copolymer substituent comprising propylene oxide (PO) repeat units and ethylene oxide (EO) repeat units, wherein the number average molecular weight of the suppressor compound is between about 1,000 and about 20,000.