Invention Grant
- Patent Title: Semiconductor device
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Application No.: US16726379Application Date: 2019-12-24
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Publication No.: US11699992B2Publication Date: 2023-07-11
- Inventor: Jintae Kim , Byounggon Kang , Changbeom Kim , Ha-Young Kim , Yongeun Cho
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si
- Agency: Muir Patent Law, PLLC
- Priority: KR 20190110556 2019.09.06
- Main IPC: H03K3/037
- IPC: H03K3/037 ; H01L27/02 ; H01L23/528 ; H01L29/06 ; H01L27/092 ; H01L23/522 ; H01L29/423

Abstract:
A semiconductor device includes a flip flop cell. The flip flop cell is formed on a semiconductor substrate, includes a flip flop circuit, and comprises a scan mux circuit, a master latch circuit, a slave latch circuit, a clock driver circuit, and an output circuit. Each of the scan mux circuit, the master latch circuit, the slave latch circuit, the clock driver circuit, and the output circuit includes a plurality of active devices which together output a resulting signal for that circuit based on inputs, is a sub-circuit of the flip flop circuit, and occupies a continuously-bounded area of the flip flop circuit from a plan view. At least a first sub-circuit and a second sub-circuit of the sub-circuits overlap from the plan view in a first overlap region, the first overlap region including part of a first continuously-bounded area for the first sub-circuit and part of a second continuously-bounded area for the second sub-circuit.
Public/Granted literature
- US20210075406A1 SEMICONDUCTOR DEVICE Public/Granted day:2021-03-11
Information query
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