Invention Grant
- Patent Title: Leakage degradation control and measurement
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Application No.: US16833328Application Date: 2020-03-27
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Publication No.: US11703927B2Publication Date: 2023-07-18
- Inventor: Oren Zonensain , Roman Rechter , Almog Reshef , Maxim Levit , Nadav Shulman , Efraim Rotem
- Applicant: Intel Corporation
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Schwabe, Williamson & Wyatt, P.C.
- Main IPC: G06F1/00
- IPC: G06F1/00 ; G06F11/30 ; G06F1/28 ; G01R31/52

Abstract:
A performance management scheme for a processor based on leakage current measurement in field. The scheme performs the operations of detection and correction. The operation of detection measures per core leakage current in the field (e.g., using voltage regulator electrical current counters). The operation of correction changes the processor power management behavior. For example, processor cores showing high leakage degradation may be logically swapped with cores showing low leakage degradation.
Public/Granted literature
- US20200225723A1 LEAKAGE DEGRADATION CONTROL AND MEASUREMENT Public/Granted day:2020-07-16
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