Invention Grant
- Patent Title: Semiconductor component having a compressive strain layer and method for producing the semiconductor component having a compressive strain layer
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Application No.: US17255435Application Date: 2019-06-27
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Publication No.: US11705370B2Publication Date: 2023-07-18
- Inventor: Benjamin Michaelis , Markus Broell , Robert Walter , Franz Eberhard , Michael Huber , Wolfgang Schmid
- Applicant: OSRAM OLED GmbH
- Applicant Address: DE Regensburg
- Assignee: OSRAM OLED GmbH
- Current Assignee: OSRAM OLED GmbH
- Current Assignee Address: DE Regensburg
- Agency: Viering, Jentschura & Partner mbB
- Priority: DE 2018115594.8 2018.06.28
- International Application: PCT/EP2019/067183 2019.06.27
- International Announcement: WO2020/002514A 2020.01.02
- Date entered country: 2020-12-23
- Main IPC: H01L21/78
- IPC: H01L21/78 ; H01L33/00 ; H01L23/50 ; H01L23/00 ; H01L31/02 ; H01L31/0216 ; H01L31/18 ; H01L33/44 ; H01L33/62
Abstract:
A semiconductor component may include a first compressive strain layer on top of a semiconductor body. A material for the first compressive strain layer may include Ta, Mo, Nb, compounds thereof, and combinations thereof.
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