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公开(公告)号：US20210328106A1
公开(公告)日：2021-10-21
申请号：US17258757
申请日：2019-07-11
Applicant: Osram OLED GmbH
Inventor： Fabian Kopp , Attila Molnar , Franz Eberhard
Abstract: An optoelectronic semiconductor component comprises a first semiconductor layer of a first conductivity type having a first main surface and a second semiconductor layer of a second conductivity type arranged on a side facing away from the first main surface of the first semiconductor layer. The optoelectronic semiconductor component further comprises, on the side of the first main surface, a first current spreading structure electrically connected to the first semiconductor layer and a second current spreading structure electrically connected to the second semiconductor layer. The optoelectronic semiconductor component furthermore includes a dielectric mirror layer arranged on the side of the first main surface of the first semiconductor layer and on a side of the first or second current spreading structure facing away from the first semiconductor layer. At least one of the first and second current spreading structures contains silver.
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公开(公告)号：US12080827B2
公开(公告)日：2024-09-03
申请号：US18186037
申请日：2023-03-17
Applicant: OSRAM OLED GmbH
Inventor： Fabian Kopp , Attila Molnar , Bjoern Muermann , Franz Eberhard
IPC: H01L33/46 , H01L33/14 , H01L33/20 , H01L33/32 , H01L33/40 , H01L33/42 , H01L33/44 , H01L33/62 , H01L33/08 , H01L33/38
CPC classification number: H01L33/14 , H01L33/20 , H01L33/32 , H01L33/46 , H01L33/62 , H01L33/08 , H01L33/38 , H01L33/42
Abstract: In an embodiment a radiation-emitting semiconductor chip includes a semiconductor body having an active region configured to generate radiation, a first contact layer having a first contact area and a first contact finger structure connected to the first contact area, a second contact layer having a second contact area and a second contact finger structure connected to the second contact area, a current distribution layer electrically conductively connected to the first contact layer, a connection layer electrically conductively connected to the first contact layer via the current distribution layer and an insulation layer, wherein the insulation layer is arranged in places between the connection layer and the current distribution layer, wherein the insulation layer has at a plurality of openings, in which the connection layer and the current distribution layer adjoin one another, and wherein edge regions of the insulation layer includes more openings than a central region of the insulation layer.
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公开(公告)号：US11164994B2
公开(公告)日：2021-11-02
申请号：US16310787
申请日：2017-06-26
Applicant: OSRAM OLED GmbH
Inventor： Fabian Kopp , Attila Molnar , Bjoern Muermann , Franz Eberhard
Abstract: A radiation-emitting semiconductor chip is disclosed. In an embodiment, a radiation-emitting semiconductor chip includes a semiconductor body configured to generate radiation, a first contact layer having a first contact area for external electrical contacting the semiconductor chip and a first contact finger structure connected to the first contact area, a second contact layer having a second contact area for external electrical contacting the semiconductor chip and a second contact finger structure connected to the second contact area, wherein the first contact finger structure and the second contact finger structure overlap in places, a current distribution layer electrically conductively connected to the first contact layer, a connection layer electrically conductively connected to the first contact layer via the current distribution layer and an insulation layer arranged in places between the connection layer and the current distribution layer, wherein the insulation layer has at least one opening.
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公开(公告)号：US20220005974A1
公开(公告)日：2022-01-06
申请号：US17480920
申请日：2021-09-21
Applicant: OSRAM OLED GmbH
Inventor： Fabian Kopp , Attila Molnar , Bjoern Muermann , Franz Eberhard
Abstract: In an embodiment a radiation-emitting semiconductor chip includes a semiconductor body having an active region configured to generate radiation, a first contact layer having a first contact area for external electrical contacting the radiation-emitting semiconductor chip and a first contact finger structure connected to the first contact area, a second contact layer having a second contact area for external electrical contacting the radiation-emitting semiconductor chip and a second contact finger structure connected to the second contact area, wherein the first contact finger structure and the second contact finger structure overlap in places in plan view of the radiation-emitting semiconductor chip, a current distribution layer electrically conductively connected to the first contact layer, a connection layer electrically conductively connected to the first contact layer via the current distribution layer and an insulation layer containing a dielectric material, wherein the insulation layer is arranged in places between the connection layer and the current distribution layer.
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Patent Agency Ranking
公开(公告)号：US20210265213A1
公开(公告)日：2021-08-26
申请号：US17255435
申请日：2019-06-27
Applicant: OSRAM OLED GmbH
Inventor： Benjamin Michaelis , Markus Broell , Robert Walter , Franz Eberhard , Michael Huber , Wolfgang Schmid
IPC: H01L21/78 , H01L33/44 , H01L31/0216 , H01L23/50 , H01L33/62 , H01L31/02 , H01L23/00 , H01L33/00 , H01L31/18
Abstract: A semiconductor component may include a first compressive strain layer on top of a semiconductor body. A material for the first compressive strain layer may include Ta, Mo, Nb, compounds thereof, and combinations thereof.
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公开(公告)号：US20230231080A1
公开(公告)日：2023-07-20
申请号：US18186037
申请日：2023-03-17
Applicant: OSRAM OLED GmbH
Inventor： Fabian Kopp , Attila Molnar , Bjoern Muermann , Franz Eberhard
Abstract: In an embodiment a radiation-emitting semiconductor chip includes a semiconductor body having an active region configured to generate radiation, a first contact layer having a first contact area and a first contact finger structure connected to the first contact area, a second contact layer having a second contact area and a second contact finger structure connected to the second contact area, a current distribution layer electrically conductively connected to the first contact layer, a connection layer electrically conductively connected to the first contact layer via the current distribution layer and an insulation layer, wherein the insulation layer is arranged in places between the connection layer and the current distribution layer, wherein the insulation layer has at a plurality of openings, in which the connection layer and the current distribution layer adjoin one another, and wherein edge regions of the insulation layer includes more openings than a central region of the insulation layer.
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公开(公告)号：US11631783B2
公开(公告)日：2023-04-18
申请号：US17480920
申请日：2021-09-21
Applicant: OSRAM OLED GmbH
Inventor： Fabian Kopp , Attila Molnar , Bjoern Muermann , Franz Eberhard
Abstract: In an embodiment a radiation-emitting semiconductor chip includes a semiconductor body having an active region configured to generate radiation, a first contact layer having a first contact area for external electrical contacting the radiation-emitting semiconductor chip and a first contact finger structure connected to the first contact area, a second contact layer having a second contact area for external electrical contacting the radiation-emitting semiconductor chip and a second contact finger structure connected to the second contact area, wherein the first contact finger structure and the second contact finger structure overlap in places in plan view of the radiation-emitting semiconductor chip, a current distribution layer electrically conductively connected to the first contact layer, a connection layer electrically conductively connected to the first contact layer via the current distribution layer and an insulation layer containing a dielectric material, wherein the insulation layer is arranged in places between the connection layer and the current distribution layer.
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公开(公告)号：US12051768B2
公开(公告)日：2024-07-30
申请号：US17258757
申请日：2019-07-11
Applicant: Osram OLED GmbH
Inventor： Fabian Kopp , Attila Molnar , Franz Eberhard
CPC classification number: H01L33/405 , H01L33/42 , H01L33/46 , H01L33/62 , H01L2933/0016 , H01L2933/0025
Abstract: An optoelectronic semiconductor component comprises a first semiconductor layer of a first conductivity type having a first main surface and a second semiconductor layer of a second conductivity type arranged on a side facing away from the first main surface of the first semiconductor layer. The optoelectronic semiconductor component further comprises, on the side of the first main surface, a first current spreading structure electrically connected to the first semiconductor layer and a second current spreading structure electrically connected to the second semiconductor layer. The optoelectronic semiconductor component furthermore includes a dielectric mirror layer arranged on the side of the first main surface of the first semiconductor layer and on a side of the first or second current spreading structure facing away from the first semiconductor layer. At least one of the first and second current spreading structures contains silver.
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公开(公告)号：US11705370B2
公开(公告)日：2023-07-18
申请号：US17255435
申请日：2019-06-27
Applicant: OSRAM OLED GmbH
Inventor： Benjamin Michaelis , Markus Broell , Robert Walter , Franz Eberhard , Michael Huber , Wolfgang Schmid
IPC: H01L21/78 , H01L33/00 , H01L23/50 , H01L23/00 , H01L31/02 , H01L31/0216 , H01L31/18 , H01L33/44 , H01L33/62
CPC classification number: H01L21/78 , H01L23/50 , H01L24/94 , H01L31/02002 , H01L31/0216 , H01L31/186 , H01L33/0093 , H01L33/0095 , H01L33/44 , H01L33/62 , H01L24/32 , H01L24/83 , H01L2224/32225 , H01L2224/83192 , H01L2224/83801
Abstract: A semiconductor component may include a first compressive strain layer on top of a semiconductor body. A material for the first compressive strain layer may include Ta, Mo, Nb, compounds thereof, and combinations thereof.
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