- 专利标题： Semiconductor device with fin structures
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申请号： US17194910申请日： 2021-03-08
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公开(公告)号： US11710663B2公开(公告)日： 2023-07-25
- 发明人: Wen-Chun Keng , Yu-Kuan Lin , Chang-Ta Yang , Ping-Wei Wang
- 申请人： Taiwan Semiconductor Manufacturing Company., Ltd.
- 申请人地址： TW Hsinchu
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TW Hsinchu
- 代理机构： Birch, Stewart, Kolasch & Birch, LLP
- 分案原申请号： US16047121 2018.07.27
- 主分类号： H01L21/8234
- IPC分类号： H01L21/8234 ; H01L27/088 ; H01L29/08 ; H01L21/311 ; H01L21/3065
摘要：
A semiconductor device structure is provided. The semiconductor device structure includes a semiconductor substrate and a first fin structure, a second fin structure, and a third fin structure over the semiconductor substrate. The semiconductor device structure also includes a merged semiconductor element on the first fin structure and the second fin structure and an isolated semiconductor element on the third fin structure. The semiconductor device structure further includes an isolation feature over the semiconductor substrate and partially or completely surrounding the first fin structure, the second fin structure, and the third fin structure. A top surface of the first fin structure is below a top surface of the isolation feature, and a top surface of the third fin structure is above the top surface of the isolation feature.
公开/授权文献
- US20210210389A1 SEMICONDUCTOR DEVICE WITH FIN STRUCTURES 公开/授权日：2021-07-08
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