- 专利标题: Semiconductor device and manufacturing method thereof
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申请号: US17490009申请日: 2021-09-30
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公开(公告)号: US11710751B2公开(公告)日: 2023-07-25
- 发明人: Yoshiyuki Kurokawa , Takayuki Ikeda , Hikaru Tamura , Munehiro Kozuma , Masataka Ikeda , Takeshi Aoki
- 申请人: Semiconductor Energy Laboratory Co., Ltd.
- 申请人地址: JP Atsugi
- 专利权人: Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人: Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人地址: JP Kanagawa-ken
- 代理机构: Robinson Intellectual Property Law Office
- 代理商 Eric J. Robinson
- 优先权: JP 10050486 2010.03.08
- 主分类号: H01L27/146
- IPC分类号: H01L27/146 ; H01L29/786 ; H01L31/105 ; H04N25/63 ; H04N25/75 ; H04N25/76
摘要:
In a CMOS image sensor in which a plurality of pixels is arranged in a matrix, a transistor in which a channel formation region includes an oxide semiconductor is used for each of a charge accumulation control transistor and a reset transistor which are in a pixel portion. After a reset operation of the signal charge accumulation portion is performed in all the pixels arranged in the matrix, a charge accumulation operation by the photodiode is performed in all the pixels, and a read operation of a signal from the pixel is performed per row. Accordingly, an image can be taken without a distortion.
公开/授权文献
- US20220020793A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 公开/授权日:2022-01-20
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