Invention Grant
- Patent Title: Multi channel semiconductor device having multi dies and operation method thereof
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Application No.: US17875865Application Date: 2022-07-28
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Publication No.: US11721391B2Publication Date: 2023-08-08
- Inventor: Yoon-Joo Eom , Joon-Young Park , Yongcheol Bae , Won Young Lee , Seongjin Jang , Junghwan Choi , Joosun Choi
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si
- Agency: Muir Patent Law, PLLC
- Priority: KR 20140086188 2014.07.09
- Main IPC: G11C11/4093
- IPC: G11C11/4093 ; G11C11/4096 ; G11C7/10

Abstract:
An operation method of a semiconductor device is disclosed. The semiconductor device includes separate first and second dies in a package and receives first types of signals through first and second respective channels independent of each other and corresponding to the first and second respective dies. The method includes a step in which when information for controlling internal operations of the first and second dies is first applied to the first die through a first pad, the first die performs the internal operation and also transmits the information to the second die through an internal interface connecting the first die and the second die, and a step in which when the information is transmitted to the second die, the second die performs the internal operation.
Public/Granted literature
- US20220366969A1 MULTI CHANNEL SEMICONDUCTOR DEVICE HAVING MULTI DIES AND OPERATION METHOD THEREOF Public/Granted day:2022-11-17
Information query
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