Invention Grant
- Patent Title: Method of forming stacked trench contacts and structures formed thereby
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Application No.: US17723309Application Date: 2022-04-18
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Publication No.: US11721630B2Publication Date: 2023-08-08
- Inventor: Bernhard Sell , Oleg Golonzka
- Applicant: Intel Corporation
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Schwabe, Williamson & Wyatt P.C.
- Main IPC: H01L23/535
- IPC: H01L23/535 ; H01L21/768 ; H01L23/485 ; H01L23/522 ; H01L21/28 ; H01L29/49 ; H01L29/66 ; H01L29/78 ; H01L21/8234 ; H01L23/528 ; H01L23/532 ; H01L27/088 ; H01L29/08 ; H01L29/417
Abstract:
Methods and associated structures of forming a microelectronic device are described. Those methods may include forming a structure comprising a first contact metal disposed on a source/drain contact of a substrate, and a second contact metal disposed on a top surface of the first contact metal, wherein the second contact metal is disposed within an ILD disposed on a top surface of a metal gate disposed on the substrate.
Public/Granted literature
- US20220246529A1 METHOD OF FORMING STACKED TRENCH CONTACTS AND STRUCTURES FORMED THEREBY Public/Granted day:2022-08-04
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