Invention Grant
- Patent Title: Bipolar junction transistors including a stress liner
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Application No.: US17524438Application Date: 2021-11-11
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Publication No.: US11721722B2Publication Date: 2023-08-08
- Inventor: Man Gu , Jagar Singh , Haiting Wang , Jeffrey Johnson
- Applicant: GlobalFoundries U.S. Inc.
- Applicant Address: US NY Malta
- Assignee: GlobalFoundries U.S. Inc.
- Current Assignee: GlobalFoundries U.S. Inc.
- Current Assignee Address: US NY Malta
- Agency: Thompson Hine LLP
- Agent Francois Pagette
- Main IPC: H01L29/10
- IPC: H01L29/10 ; H01L29/08 ; H01L29/735 ; H01L29/737 ; H01L29/06 ; H01L29/66 ; H01L29/78
Abstract:
Structures for a bipolar junction transistor and methods of forming a structure for a bipolar junction transistor. The structure includes a collector having a raised portion, an emitter having a raised portion, and a base laterally arranged between the raised portion of the emitter and the raised portion of the collector. The base includes an intrinsic base layer and an extrinsic base layer stacked with the intrinsic base layer. The structure further includes a stress liner positioned to overlap with the raised portion of the collector, the raised portion of the emitter, and the extrinsic base layer.
Public/Granted literature
- US20230063900A1 BIPOLAR JUNCTION TRANSISTORS INCLUDING A STRESS LINER Public/Granted day:2023-03-02
Information query
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