- 专利标题: Semiconductor image sensor module and method of manufacturing the same
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申请号: US17545591申请日: 2021-12-08
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公开(公告)号: US11722800B2公开(公告)日: 2023-08-08
- 发明人: Shin Iwabuchi , Makoto Motoyoshi
- 申请人: Sony Group Corporation
- 申请人地址: JP Tokyo
- 专利权人: Sony Group Corporation
- 当前专利权人: Sony Group Corporation
- 当前专利权人地址: JP Tokyo
- 代理机构: Michael Best & Friedrich LLP
- 优先权: JP 05163267 2005.06.02 JP 05197730 2005.07.06
- 主分类号: H04N5/378
- IPC分类号: H04N5/378 ; H01L27/146 ; H01L23/00 ; H01L23/48 ; H01L25/18 ; H04N5/225 ; H04N5/369 ; H04N5/374 ; H04N25/75 ; H04N23/54 ; H04N25/76 ; H04N25/79 ; H01L29/788 ; H01L29/792 ; H10B69/00
摘要:
A CMOS type semiconductor image sensor module wherein a pixel aperture ratio is improved, chip use efficiency is improved and furthermore, simultaneous shutter operation by all the pixels is made possible, and a method for manufacturing such semiconductor image sensor module are provided. The semiconductor image sensor module is provided by stacking a first semiconductor chip, which has an image sensor wherein a plurality of pixels composed of a photoelectric conversion element and a transistor are arranged, and a second semiconductor chip, which has an A/D converter array. Preferably, the semiconductor image sensor module is provided by stacking a third semiconductor chip having a memory element array. Furthermore, the semiconductor image sensor module is provided by stacking the first semiconductor chip having the image sensor and a fourth semiconductor chip having an analog nonvolatile memory array.
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