Invention Grant
- Patent Title: Substrate processing method and substrate processing apparatus
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Application No.: US16803377Application Date: 2020-02-27
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Publication No.: US11728166B2Publication Date: 2023-08-15
- Inventor: Sho Kumakura , Maju Tomura , Yoshihide Kihara , Hironari Sasagawa
- Applicant: TOKYO ELECTRON LIMITED
- Applicant Address: JP Tokyo
- Assignee: TOKYO ELECTRON LIMITED
- Current Assignee: TOKYO ELECTRON LIMITED
- Current Assignee Address: JP Tokyo
- Agency: Weihrouch IP
- Priority: JP 19036709 2019.02.28 JP 19203958 2019.11.11
- Main IPC: H01L21/033
- IPC: H01L21/033 ; H01J37/32 ; H01L21/311 ; H01L21/02
Abstract:
Provided is a method of processing a substrate including an etching target film and a mask having an opening formed on the etching target film. The method includes a) providing the substrate on a stage in a chamber and b) forming a film having a thickness that differs along a film thickness direction of the mask, on a side wall of the opening.
Public/Granted literature
- US20200279733A1 SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS Public/Granted day:2020-09-03
Information query
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