Invention Grant
- Patent Title: Low-refractivity grid structure and method forming same
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Application No.: US16990647Application Date: 2020-08-11
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Publication No.: US11728364B2Publication Date: 2023-08-15
- Inventor: Kun-Huei Lin , Yun-Wei Cheng , Chun-Hao Chou , Kuo-Cheng Lee , Cheng Yuan Wang
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Slater Matsil, LLP
- Main IPC: H01L27/146
- IPC: H01L27/146 ; G02B5/20

Abstract:
A method includes forming image sensors in a semiconductor substrate, thinning the semiconductor substrate from a backside of the semiconductor substrate, forming a dielectric layer on the backside of the semiconductor substrate, and forming a polymer grid on the backside of the semiconductor substrate. The polymer grid has a first refractivity value. The method further includes forming color filters in the polymer grid, wherein the color filters has a second refractivity value higher than the first refractivity value, and forming micro-lenses on the color filters.
Information query
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