公开(公告)号：US11728364B2

公开(公告)日：2023-08-15

申请号：US16990647

申请日：2020-08-11

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Kun-Huei Lin ,  Yun-Wei Cheng ,  Chun-Hao Chou ,  Kuo-Cheng Lee ,  Cheng Yuan Wang

IPC: H01L27/146 ,  G02B5/20

CPC classification number: H01L27/14629 ,  H01L27/1463 ,  H01L27/1464 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14634 ,  H01L27/14645 ,  H01L27/14685 ,  G02B5/20

Abstract: A method includes forming image sensors in a semiconductor substrate, thinning the semiconductor substrate from a backside of the semiconductor substrate, forming a dielectric layer on the backside of the semiconductor substrate, and forming a polymer grid on the backside of the semiconductor substrate. The polymer grid has a first refractivity value. The method further includes forming color filters in the polymer grid, wherein the color filters has a second refractivity value higher than the first refractivity value, and forming micro-lenses on the color filters.

公开(公告)号：US20220384509A1

公开(公告)日：2022-12-01

申请号：US17818635

申请日：2022-08-09

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Kun-Huei Lin ,  Yun-Wei Cheng ,  Chun-Hao Chou ,  Kuo-Cheng Lee ,  Cheng Yuan Wang

IPC: H01L27/146

Abstract: A method includes forming image sensors in a semiconductor substrate, thinning the semiconductor substrate from a backside of the semiconductor substrate, forming a dielectric layer on the backside of the semiconductor substrate, and forming a polymer grid on the backside of the semiconductor substrate. The polymer grid has a first refractivity value. The method further includes forming color filters in the polymer grid, wherein the color filters has a second refractivity value higher than the first refractivity value, and forming micro-lenses on the color filters.