公开(公告)号：US09324752B2

公开(公告)日：2016-04-26

申请号：US14192322

申请日：2014-02-27

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd

Inventor： Volume Chien ,  Kun-Huei Lin ,  Chia-Yu Wei ,  Allen Tseng ,  Chi-Cherng Jeng ,  Chuan-Pu Liu

IPC: H01L27/148 ,  H01L27/146

CPC classification number: H01L27/14623 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/1464 ,  H01L27/14685

Abstract: The disclosure provides an image sensor device and a manufacturing method. The image sensor device includes a semiconductor substrate and a light sensing region in the semiconductor substrate. The image sensor device also includes a light blocking structure in the semiconductor substrate and adjacent to the light sensing region. A sidewall of the light blocking structure is a curved surface.

Abstract translation: 本公开提供了一种图像传感器装置和制造方法。 图像传感器装置包括半导体衬底和半导体衬底中的光感测区域。 图像传感器装置还包括在半导体衬底中并与光感测区相邻的遮光结构。 遮光结构的侧壁是曲面。

公开(公告)号：US11521997B2

公开(公告)日：2022-12-06

申请号：US16850524

申请日：2020-04-16

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Kun-Huei Lin ,  Yun-Wei Cheng ,  Chun-Hao Chou ,  Kuo-Cheng Lee ,  Chun-Wei Chia

IPC: H01L27/146 ,  H04N5/335 ,  H01L29/423

Abstract: An IC structure includes a substrate region having a first doping type and including an upper surface, first and second regions within the substrate region, each of the first and second regions having a second doping type opposite the first doping type, and a gate conductor including a plurality of conductive protrusions extending into the substrate region in a direction perpendicular to a plane of the upper surface. The conductive protrusions are electrically connected to each other, and at least a portion of each conductive protrusion is positioned between the first and second regions.

公开(公告)号：US11728364B2

公开(公告)日：2023-08-15

申请号：US16990647

申请日：2020-08-11

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Kun-Huei Lin ,  Yun-Wei Cheng ,  Chun-Hao Chou ,  Kuo-Cheng Lee ,  Cheng Yuan Wang

IPC: H01L27/146 ,  G02B5/20

CPC classification number: H01L27/14629 ,  H01L27/1463 ,  H01L27/1464 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14634 ,  H01L27/14645 ,  H01L27/14685 ,  G02B5/20

Abstract: A method includes forming image sensors in a semiconductor substrate, thinning the semiconductor substrate from a backside of the semiconductor substrate, forming a dielectric layer on the backside of the semiconductor substrate, and forming a polymer grid on the backside of the semiconductor substrate. The polymer grid has a first refractivity value. The method further includes forming color filters in the polymer grid, wherein the color filters has a second refractivity value higher than the first refractivity value, and forming micro-lenses on the color filters.

公开(公告)号：US09917132B2

公开(公告)日：2018-03-13

申请号：US15635318

申请日：2017-06-28

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Tsung-Han Tsai ,  Kun-Huei Lin ,  Chun-Hao Chou ,  Tzu-Hsuan Hsu ,  Ching-Chun Wang ,  Kuo-Cheng Lee ,  Yung-Lung Hsu

IPC: H01L27/146

CPC classification number: H01L27/14649 ,  H01L27/14607 ,  H01L27/14621 ,  H01L27/14645 ,  H01L27/14685 ,  H01L27/14689

Abstract: A semiconductor device includes a substrate, light sensing devices, at least one infrared radiation sensing device, a transparent insulating layer, an infrared radiation cut layer, a color filter layer and an infrared radiation color filter layer. The light sensing devices and the at least one infrared radiation sensing device are disposed in the substrate and are adjacent to each other. The transparent insulating layer is disposed on the substrate overlying the light sensing devices and the at least one infrared radiation sensing device. The infrared radiation cut layer is disposed on the transparent insulating layer overlying the light sensing devices for filtering out infrared radiation and/or near infrared radiation. The color filter layer is disposed on the infrared radiation cut layer. The infrared radiation color filter layer is disposed on the transparent insulating layer overlying the at least one infrared radiation sensing device.

公开(公告)号：US20220384509A1

公开(公告)日：2022-12-01

申请号：US17818635

申请日：2022-08-09

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Kun-Huei Lin ,  Yun-Wei Cheng ,  Chun-Hao Chou ,  Kuo-Cheng Lee ,  Cheng Yuan Wang

IPC: H01L27/146

Abstract: A method includes forming image sensors in a semiconductor substrate, thinning the semiconductor substrate from a backside of the semiconductor substrate, forming a dielectric layer on the backside of the semiconductor substrate, and forming a polymer grid on the backside of the semiconductor substrate. The polymer grid has a first refractivity value. The method further includes forming color filters in the polymer grid, wherein the color filters has a second refractivity value higher than the first refractivity value, and forming micro-lenses on the color filters.

公开(公告)号：US10276616B2

公开(公告)日：2019-04-30

申请号：US15692395

申请日：2017-08-31

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Kun-Huei Lin ,  Yin-Chieh Huang ,  Yun-Wei Cheng ,  Yi-Hsing Chu ,  Cheng-Yuan Li ,  Chun-Hao Chou

IPC: H01L27/14 ,  H01L27/146

Abstract: An image sensor device is provided. The image sensor device includes a semiconductor substrate having a first light-sensing region and a second light-sensing region adjacent to the first light-sensing region. The image sensor device includes an isolation structure in the semiconductor substrate and surrounding the first light-sensing region and the second light-sensing region. The image sensor device includes a reflective grid over the isolation structure and surrounding the first light-sensing region and the second light-sensing region. The image sensor device includes a first color filter over the first light-sensing region and extending into a first trench of the reflective grid. The image sensor device includes a second color filter over the second light-sensing region and extending into the first trench to be in direct contact with the first color filter in the first trench.

公开(公告)号：US09711560B2

公开(公告)日：2017-07-18

申请号：US14562424

申请日：2014-12-05

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Tsung-Han Tsai ,  Kun-Huei Lin ,  Chun-Hao Chou ,  Tzu-Hsuan Hsu ,  Ching-Chun Wang ,  Kuo-Cheng Lee ,  Yung-Lung Hsu

IPC: H01L27/146

CPC classification number: H01L27/14649 ,  H01L27/14607 ,  H01L27/14621 ,  H01L27/14645 ,  H01L27/14685 ,  H01L27/14689

Abstract: A semiconductor device includes a substrate, light sensing devices, at least one infrared radiation sensing device, a transparent insulating layer, an infrared radiation cut layer, a color filter layer and an infrared radiation color filter layer. The light sensing devices and the at least one infrared radiation sensing device are disposed in the substrate and are adjacent to each other. The transparent insulating layer is disposed on the substrate overlying the light sensing devices and the at least one infrared radiation sensing device. The infrared radiation cut layer is disposed on the transparent insulating layer overlying the light sensing devices for filtering out infrared radiation and/or near infrared radiation. The color filter layer is disposed on the infrared radiation cut layer. The infrared radiation color filter layer is disposed on the transparent insulating layer overlying the at least one infrared radiation sensing device.