Invention Grant
- Patent Title: Semiconductor laser device
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Application No.: US17718995Application Date: 2022-04-12
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Publication No.: US11728617B2Publication Date: 2023-08-15
- Inventor: Hideyuki Fujimoto
- Applicant: NICHIA CORPORATION
- Applicant Address: JP Anan
- Assignee: NICHIA CORPORATION
- Current Assignee: NICHIA CORPORATION
- Current Assignee Address: JP Anan
- Agency: Foley & Lardner LLP
- Priority: JP 16027113 2016.02.16
- Main IPC: H01S5/02355
- IPC: H01S5/02355 ; H01S5/024 ; H01S5/02345 ; H01S5/02212 ; H01S5/02255

Abstract:
A semiconductor laser device includes: a housing including: a first upper upward-facing surface, a second upper upward-facing surface, a mounting surface, inner lateral surfaces, a first wiring part disposed on the first upper upward-facing surface, and a second wiring part disposed on the second upper upward-facing surface; a submount including: a first main surface fixed to the mounting surface of the housing, and a second main surface opposite to the first main surface; a semiconductor laser element fixed to the second main surface of the submount; a first wire connected to the first wiring part for electrical connection of the semiconductor laser element; and a second wire connected to the second wiring part for electrical connection of the semiconductor laser element.
Public/Granted literature
- US20220239061A1 SEMICONDUCTOR LASER DEVICE Public/Granted day:2022-07-28
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