Invention Grant
- Patent Title: Dynamic voltage setting optimization during lifetime of a memory device
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Application No.: US16925215Application Date: 2020-07-09
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Publication No.: US11740959B2Publication Date: 2023-08-29
- Inventor: Zhongguang Xu , Murong Lang , Zhenming Zhou
- Applicant: MICRON TECHNOLOGY, INC.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Lowenstein Sandler LLP
- Main IPC: G11C16/04
- IPC: G11C16/04 ; G06F11/10 ; G11C16/10 ; G11C29/00

Abstract:
An initial level of sensing voltage is set based on one or more characteristics of the segment of the memory device. A count for operational cycles for a segment of a memory device is set. Responsive to determining that a number of operational cycles performed on the segment of the memory device has reached the set count of operational cycles, the sensing voltage is varied with respect to the initial level of sensing voltage. The sensing voltage is adjusted to a new level based on wearing of the segment of the memory device during the number of operational cycles performed on the segment of the memory device.
Public/Granted literature
- US20220012121A1 DYNAMIC VOLTAGE SETTING OPTIMIZATION DURING LIFETIME OF A MEMORY DEVICE Public/Granted day:2022-01-13
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