- 专利标题： Memory read circuitry with a flipped voltage follower
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申请号： US17333109申请日： 2021-05-28
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公开(公告)号： US11742012B2公开(公告)日： 2023-08-29
- 发明人: Karthik Ramanan , Jon Scott Choy , Padmaraj Sanjeevarao
- 申请人： NXP USA, INC.
- 申请人地址： US TX Austin
- 专利权人： NXP USA, INC.
- 当前专利权人： NXP USA, INC.
- 当前专利权人地址： US TX Austin
- 主分类号： G11C11/16
- IPC分类号： G11C11/16 ; G11C7/06 ; G11C7/08 ; G11C11/4074 ; G11C13/00
摘要：
A memory includes read circuitry for reading values stored in memory cells. The read circuitry includes flipped voltage followers for providing bias voltages to nodes of current paths coupled to sense amplifiers during memory read operations.
公开/授权文献
- US20220383925A1 MEMORY READ CIRCUITRY WITH A FLIPPED VOLTAGE FOLLOWER 公开/授权日：2022-12-01
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