Invention Grant
- Patent Title: Structure and method for enhancing robustness of ESD device
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Application No.: US17106553Application Date: 2020-11-30
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Publication No.: US11742236B2Publication Date: 2023-08-29
- Inventor: Alexander Kalnitsky , Jen-Chou Tseng , Chia-Wei Hsu , Ming-Fu Tsai
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LIMITED
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LIMITED
- Current Assignee Address: TW Hsinchu
- Agency: Slater Matsil, LLP
- The original application number of the division: US16021200 2018.06.28
- Main IPC: H01L21/762
- IPC: H01L21/762 ; H01L27/02 ; H01L29/06 ; H01L29/73 ; H01L29/66

Abstract:
Methods and devices are provided herein for enhancing robustness of a bipolar electrostatic discharge (ESD) device. The robustness of a bipolar ESD device includes providing an emitter region and a collector region adjacent to the emitter region. An isolation structure is provided between the emitter region and the collector region. A ballasting characteristic at the isolation structure is modified by inserting at least one partition structure therein. Each partition structure extends substantially abreast at least one of the emitter and the collector regions.
Public/Granted literature
- US20210082743A1 Structure and Method for Enhancing Robustness of ESD Device Public/Granted day:2021-03-18
Information query
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