Invention Grant
- Patent Title: Semiconductor light-emitting device and method of fabricating the same
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Application No.: US17036090Application Date: 2020-09-29
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Publication No.: US11742469B2Publication Date: 2023-08-29
- Inventor: Donggun Lee , Gibum Kim , Joosung Kim , Juhyun Kim , Tan Sakong , Jonguk Seo , Youngjo Tak
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si
- Agency: Lee IP Law, P.C.
- Priority: KR 20190153550 2019.11.26
- Main IPC: H01L33/62
- IPC: H01L33/62 ; H01L33/38 ; H01L33/48 ; H01L33/54 ; H01L33/52 ; H01L27/15

Abstract:
A semiconductor light-emitting device includes a plurality of light-emitting device structures separated from each other, each of the plurality of light-emitting device structures including a first conductivity type semiconductor layer, an active layer on the first conductivity type semiconductor layer, a second conductivity type semiconductor layer on the active layer, a first electrode connected to the first conductivity type semiconductor layer, and a second electrode connected to the second conductivity type semiconductor layer, and a partition wall structure between two adjacent light-emitting device structures of the plurality of light-emitting device structures, the partition wall structure defining a pixel space.
Public/Granted literature
- US20210159378A1 SEMICONDUCTOR LIGHT-EMITTING DEVICE AND METHOD OF FABRICATING THE SAME Public/Granted day:2021-05-27
Information query
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