公开(公告)号：US12125942B2

公开(公告)日：2024-10-22

申请号：US17352708

申请日：2021-06-21

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Youngjo Tak ,  Joosung Kim ,  Jonguk Seo ,  Sungjin Ahn ,  Donggun Lee ,  Jeongwook Lee ,  Youngjin Choi ,  Yongseok Choi ,  Jonghoon Ha

IPC: H01L33/14 ,  H01L33/38 ,  H01L33/44

CPC classification number: H01L33/14 ,  H01L33/385 ,  H01L33/44

Abstract: A semiconductor light emitting device is provided. The device includes a light emitting structure stack including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer arranged between the first conductive semiconductor layer and the second conductive semiconductor layer; a first electrode electrically connected to the first conductive semiconductor layer; a second electrode electrically connected to the second conductive semiconductor layer; and a field control structure on a sidewall of the light emitting structure stack, the field control structure including a field control electrode on a sidewall of the active layer; and a dielectric layer between the field control electrode and the active layer.

公开(公告)号：US11784285B2

公开(公告)日：2023-10-10

申请号：US17022496

申请日：2020-09-16

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Youngjin Choi ,  Joosung Kim ,  Jonguk Seo ,  Sungjin Ahn ,  Donggun Lee ,  Jeongwook Lee ,  Yongseok Choi ,  Youngjo Tak ,  Jonghoon Ha

IPC: H01L33/20 ,  H01L33/38 ,  H01L27/15 ,  H01L33/42 ,  H01L21/02 ,  H01L33/12

CPC classification number: H01L33/20 ,  H01L27/156 ,  H01L33/387 ,  H01L33/42 ,  H01L21/0254 ,  H01L33/12

Abstract: A three-dimensionally structured semiconductor light emitting diode includes a first conductivity-type semiconductor rod having integral first and second portions, the first portion defining a first surface, the second portion defining a second surface opposite the first surface, and a side surface between the first and second surfaces, an active layer and a second conductivity-type semiconductor layer on the side surface of the first conductivity-type semiconductor rod, the active layer and the second conductivity-type semiconductor layer being on the second portion of the first conductivity-type semiconductor rod, an insulating cap layer on the second surface of the first conductivity-type semiconductor rod, a transparent electrode layer on the second conductivity-type semiconductor layer, and a passivation layer on the transparent electrode layer and exposing a portion of the transparent electrode layer, the passivation layer extending to cover ends of the active layer and the second conductivity-type semiconductor layer adjacent to the first surface.

公开(公告)号：US11742469B2

公开(公告)日：2023-08-29

申请号：US17036090

申请日：2020-09-29

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Donggun Lee ,  Gibum Kim ,  Joosung Kim ,  Juhyun Kim ,  Tan Sakong ,  Jonguk Seo ,  Youngjo Tak

IPC: H01L33/62 ,  H01L33/38 ,  H01L33/48 ,  H01L33/54 ,  H01L33/52 ,  H01L27/15

CPC classification number: H01L33/62 ,  H01L33/382 ,  H01L33/486 ,  H01L33/54

Abstract: A semiconductor light-emitting device includes a plurality of light-emitting device structures separated from each other, each of the plurality of light-emitting device structures including a first conductivity type semiconductor layer, an active layer on the first conductivity type semiconductor layer, a second conductivity type semiconductor layer on the active layer, a first electrode connected to the first conductivity type semiconductor layer, and a second electrode connected to the second conductivity type semiconductor layer, and a partition wall structure between two adjacent light-emitting device structures of the plurality of light-emitting device structures, the partition wall structure defining a pixel space.

公开(公告)号：US10229831B2

公开(公告)日：2019-03-12

申请号：US15656305

申请日：2017-07-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Youngjo Tak ,  Sammook Kang ,  Mihyun Kim ,  Junyoun Kim

IPC: H01L21/02

Abstract: A method of fabricating a nitride semiconductor substrate including forming a buffer layer on a surface of a growth substrate, growing a first nitride semiconductor layer on the buffer layer, growing a second nitride semiconductor layer on the first nitride semiconductor layer, and removing the growth substrate may be provided. The forming a buffer layer may deform the surface of the growth substrate to have a convex shape. The forming a buffer layer and the growing a first nitride semiconductor layer may be performed within a first process chamber. The growing a second nitride semiconductor layer and the removing the growth substrate may be performed within a second process chamber.