Invention Grant
- Patent Title: Process for transferring a thin layer to a support substrate that have different thermal expansion coefficients
-
Application No.: US16618696Application Date: 2018-06-21
-
Publication No.: US11742817B2Publication Date: 2023-08-29
- Inventor: Isabelle Huyet , Cedric Charles-Alfred , Didier Landru , Alexis Drouin
- Applicant: Soitec
- Applicant Address: FR Bernin
- Assignee: Soitec
- Current Assignee: Soitec
- Current Assignee Address: FR Bernin
- Agency: TraskBritt
- Priority: FR 56116 2017.06.30
- International Application: PCT/EP2018/066552 2018.06.21
- International Announcement: WO2019/002080A 2019.01.03
- Date entered country: 2019-12-02
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H03H3/10 ; H10N30/072 ; H10N30/853

Abstract:
A process for transferring a thin layer consisting of a first material to a support substrate consisting of a second material having a different thermal expansion coefficient, comprises providing a donor substrate composed of an assembly of a thick layer formed of the first material and of a handle substrate having a thermal expansion coefficient similar to that of the support substrate, and the donor substrate having a main face on the side of the thick layer introducing light species into the thick layer to generate a plane of weakness therein and to define the thin layer between the plane of weakness and the main face of the donor substrate; assembling the main face of the donor substrate with a face of the support substrate; and detachment of the thin layer at the plane of weakness, the detachment comprising application of a heat treatment.
Public/Granted literature
Information query
IPC分类: