公开(公告)号：US20230353115A1

公开(公告)日：2023-11-02

申请号：US18348940

申请日：2023-07-07

Applicant: Soitec

Inventor： Isabelle Huyet ,  Cèdric Charles-Alfred ,  Didier Landru ,  Alexis Drouin

IPC: H03H3/10 ,  H10N30/072 ,  H10N30/853

CPC classification number: H03H3/10 ,  H10N30/072 ,  H10N30/8536 ,  H10N30/8542 ,  H10N30/8548 ,  H10N30/8554

Abstract: A process for transferring a thin layer consisting of a first material to a support substrate consisting of a second material having a different thermal expansion coefficient, comprises providing a donor substrate composed of an assembly of a thick layer formed of the first material and of a handle substrate having a thermal expansion coefficient similar to that of the support substrate, and the donor substrate having a main face on the side of the thick laver; introducing light species into the thick layer to generate a plane of weakness therein and to define the thin layer between the plane of weakness and the main face of the donor substrate; assembling the main face of the donor substrate with a face of the support substrate; and detachment of the thin layer at the plane of weakness, the detachment comprising application of a heat treatment.

公开(公告)号：US20220285520A1

公开(公告)日：2022-09-08

申请号：US17659141

申请日：2022-04-13

Applicant: Soitec

Inventor： Alexis Drouin

IPC: H01L29/51 ,  H01L21/02 ,  H01L21/762

Abstract: A process for preparing a thin layer made of ferroelectric material based on alkali metal, exhibiting a determined Curie temperature, transferred from a donor substrate to a carrier substrate by using a transfer technique including implanting light species into the donor substrate in order to produce an embrittlement plane, the thin layer having a first, free face and a second face that is arranged on the carrier substrate. The process comprises a first heat treatment of the transferred thin layer at a temperature higher than the Curie temperature, the thin layer exhibiting a multi-domain character upon completion of the first heat treatment, and introducing, after the first heat treatment, protons into the thin layer, followed by applying a second heat treatment of the thin layer at a temperature lower than the Curie temperature to generate an internal electric field that results in the thin layer being made single domain.

公开(公告)号：US11309399B2

公开(公告)日：2022-04-19

申请号：US16980310

申请日：2019-02-18

Applicant: Soitec

Inventor： Alexis Drouin

IPC: H01L21/00 ,  H01L21/02 ,  H01L29/51 ,  H01L21/762

Abstract: A process for preparing a thin layer made of ferroelectric material based on alkali metal, exhibiting a determined Curie temperature, transferred from a donor substrate to a carrier substrate by using a transfer technique including implanting light species into the donor substrate in order to produce an embrittlement plane, the thin layer having a first, free face and a second face that is arranged on the carrier substrate. The process comprises a first heat treatment of the transferred thin layer at a temperature higher than the Curie temperature, the thin layer exhibiting a multi-domain character upon completion of the first heat treatment, and introducing, after the first heat treatment, protons into the thin layer, followed by applying a second heat treatment of the thin layer at a temperature lower than the Curie temperature to generate an internal electric field that results in the thin layer being made single domain.

公开(公告)号：US20240312831A1

公开(公告)日：2024-09-19

申请号：US18566474

申请日：2022-05-25

Applicant: SOITEC ,  COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES

Inventor： Alexis Drouin ,  Gweltaz Gaudin ,  Séverin Rouchier ,  Walter Schwarzenbach ,  Julie Widiez ,  Emmanuel Rolland

IPC: H01L21/762 ,  H01L21/04

CPC classification number: H01L21/76254 ,  H01L21/0445

Abstract: A method for producing a semiconductor structure comprises: a) provision of a monocrystalline silicon carbide donor substrate and a silicon carbide support substrate; b) production of a useful layer to be transferred, comprising—implanting light species in the donor substrate at a front face, so as to form a damage profile, the profile having a main peak of deep-level defects defining a buried brittle plane and a secondary peak of defects defining a damaged surface layer, and—removing the damaged surface layer by chemical etching and/or chemical mechanical polishing of the front face of the donor substrate, so as to form a new front surface of the donor substrate; c) assembly of donor substrate with the support substrate; and d) separation along the buried fragile plane, leading to the transfer of the useful layer onto the support substrate, so as to form the semiconductor structure.

公开(公告)号：US11595021B2

公开(公告)日：2023-02-28

申请号：US16493560

申请日：2018-03-09

Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES ,  SOITEC

Inventor： Thu Trang Vo ,  Jean-Sebastien Moulet ,  Alexandre Reinhardt ,  Isabelle Huyet ,  Alexis Drouin ,  Yann Sinquin

IPC: H03H9/02 ,  H03H3/08 ,  H03H9/145 ,  H03H9/25

Abstract: The invention relates to a SAW resonator (100) comprising at least: a substrate (102); a layer (108) of piezoelectric material arranged on the substrate; a first attenuation layer (112) arranged between the substrate and the layer of piezoelectric material, and/or, when the substrate comprises at least two different layers (104, 106), a second attenuation layer (114) arranged between the two layers of the substrate; and in which the at least one attenuation layer is/are heterogeneous.

公开(公告)号：US20220247374A1

公开(公告)日：2022-08-04

申请号：US17597581

申请日：2020-03-26

Applicant: Soitec

Inventor： Isabelle Bertrand ,  Alexis Drouin ,  Isabelle Huyet ,  Eric Butaud ,  Morgane Logiou

IPC: H03H3/08 ,  H03H9/02

Abstract: A method for manufacturing a structure comprising a thin layer transferred onto a support provided with a charge trapping layer, the method comprising the following steps: —preparing the support comprising forming the trapping layer on a base substrate, the trapping layer having a hydrogen concentration of less than 10{circumflex over ( )}18 at/cm{circumflex over ( )}; —joining the support to a donor substrate by way of a dielectric layer having a hydrogen concentration of less than 10{circumflex over ( )}20 at/cm{circumflex over ( )}3 or comprising a barrier preventing the diffusion of hydrogen toward the trapping layer or having low hydrogen diffusivity; —removing part of the donor substrate to form the thin layer; the manufacturing method exposing the structure to a temperature below a maximum temperature of 1000° C. The present disclosure also relates to a structure obtained at the end of this method.

公开(公告)号：US20200186117A1

公开(公告)日：2020-06-11

申请号：US16618696

申请日：2018-06-21

Applicant: Soitec

Inventor： Isabelle Huyet ,  Cedric Charles-Alfred ,  Didier Landru ,  Alexis Drouin

IPC: H03H3/10 ,  H01L41/187 ,  H01L41/312

Abstract: A process for transferring a thin layer consisting of a first material to a support substrate consisting of a second material having a different thermal expansion coefficient, comprises providing a donor substrate composed of an assembly of a thick layer formed of the first material and of a handle substrate having a thermal expansion coefficient similar to that of the support substrate, and the donor substrate having a main face on the side of the thick layer introducing light species into the thick layer to generate a plane of weakness therein and to define the thin layer between the plane of weakness and the main face of the donor substrate; assembling the main face of the donor substrate with a face of the support substrate; and detachment of the thin layer at the plane of weakness, the detachment comprising application of a heat treatment.

公开(公告)号：US20250125140A1

公开(公告)日：2025-04-17

申请号：US18834122

申请日：2023-01-27

Applicant: Soitec

Inventor： Andrea Quintero-Colmenares ,  Frédéric Allibert ,  Alexis Drouin ,  Séverin Rouchier ,  Walter Schwarzenbach ,  Hugo Biard ,  Loïc Kabelaan ,  Oleg Kononchuk ,  Sidoine Odoul ,  Jérémy Roi

IPC: H01L21/02 ,  H01L21/324

Abstract: A method of manufacturing a polycrystalline silicon carbide wafer includes the following stages: heat treatment of a polycrystalline silicon carbide slab; thinning of the polycrystalline silicon carbide slab, the thinning comprising a correction, by withdrawal of material from the polycrystalline silicon carbide slab, of a deformation brought about by the heat treatment.

公开(公告)号：US20240072753A1

公开(公告)日：2024-02-29

申请号：US17430662

申请日：2020-03-26

Applicant: Soitec

Inventor： Alexis Drouin ,  Isabelle Huyet ,  Morgane Logiou

IPC: H03H3/08 ,  H03H9/02

CPC classification number: H03H3/08 ,  H03H9/02559 ,  H03H9/02574

Abstract: A method for preparing a monodomain thin layer of ferroelectric material comprises: implanting light species in a ferroelectric donor substrate in order to form an embrittlement plane and to define a first layer therein; assembling the donor substrate with a support substrate by means of a dielectric assembly layer; and fracturing the donor substrate at the embrittlement plane. The dielectric assembly layer comprises an oxide having a hydrogen concentration lower than that of the first layer or preventing the diffusion of hydrogen to the first layer, or the dielectric assembly layer comprises a barrier preventing the diffusion of hydrogen to the first layer. A heat treatment of a free face of the first layer is used to diffuse the hydrogen contained therein and cause the multidomain transformation of a surface portion of this first layer, followed by a thinning of the first layer in order to remove the surface portion.

公开(公告)号：US11742817B2

公开(公告)日：2023-08-29

申请号：US16618696

申请日：2018-06-21

Applicant: Soitec

Inventor： Isabelle Huyet ,  Cedric Charles-Alfred ,  Didier Landru ,  Alexis Drouin

IPC: H01L21/02 ,  H03H3/10 ,  H10N30/072 ,  H10N30/853

CPC classification number: H03H3/10 ,  H10N30/072 ,  H10N30/8536 ,  H10N30/8542 ,  H10N30/8548 ,  H10N30/8554

Abstract: A process for transferring a thin layer consisting of a first material to a support substrate consisting of a second material having a different thermal expansion coefficient, comprises providing a donor substrate composed of an assembly of a thick layer formed of the first material and of a handle substrate having a thermal expansion coefficient similar to that of the support substrate, and the donor substrate having a main face on the side of the thick layer introducing light species into the thick layer to generate a plane of weakness therein and to define the thin layer between the plane of weakness and the main face of the donor substrate; assembling the main face of the donor substrate with a face of the support substrate; and detachment of the thin layer at the plane of weakness, the detachment comprising application of a heat treatment.