公开(公告)号：US11159140B2

公开(公告)日：2021-10-26

申请号：US16313804

申请日：2017-06-26

Applicant: Soitec

Inventor： Gweltaz Gaudin ,  Isabelle Huyet

IPC: H03H9/02 ,  H01L41/08

Abstract: A hybrid structure for a surface acoustic wave device comprises a useful layer of piezoelectric material having a free first surface and a second surface disposed on a support substrate that has a lower coefficient of thermal expansion than that of the useful layer. The hybrid structure further comprises a trapping layer disposed between the useful layer and the support substrate, and at least one functional interface of predetermined roughness between the useful layer and the trapping layer.

公开(公告)号：US20230353115A1

公开(公告)日：2023-11-02

申请号：US18348940

申请日：2023-07-07

Applicant: Soitec

Inventor： Isabelle Huyet ,  Cèdric Charles-Alfred ,  Didier Landru ,  Alexis Drouin

IPC: H03H3/10 ,  H10N30/072 ,  H10N30/853

CPC classification number: H03H3/10 ,  H10N30/072 ,  H10N30/8536 ,  H10N30/8542 ,  H10N30/8548 ,  H10N30/8554

Abstract: A process for transferring a thin layer consisting of a first material to a support substrate consisting of a second material having a different thermal expansion coefficient, comprises providing a donor substrate composed of an assembly of a thick layer formed of the first material and of a handle substrate having a thermal expansion coefficient similar to that of the support substrate, and the donor substrate having a main face on the side of the thick laver; introducing light species into the thick layer to generate a plane of weakness therein and to define the thin layer between the plane of weakness and the main face of the donor substrate; assembling the main face of the donor substrate with a face of the support substrate; and detachment of the thin layer at the plane of weakness, the detachment comprising application of a heat treatment.

公开(公告)号：US11595021B2

公开(公告)日：2023-02-28

申请号：US16493560

申请日：2018-03-09

Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES ,  SOITEC

Inventor： Thu Trang Vo ,  Jean-Sebastien Moulet ,  Alexandre Reinhardt ,  Isabelle Huyet ,  Alexis Drouin ,  Yann Sinquin

IPC: H03H9/02 ,  H03H3/08 ,  H03H9/145 ,  H03H9/25

Abstract: The invention relates to a SAW resonator (100) comprising at least: a substrate (102); a layer (108) of piezoelectric material arranged on the substrate; a first attenuation layer (112) arranged between the substrate and the layer of piezoelectric material, and/or, when the substrate comprises at least two different layers (104, 106), a second attenuation layer (114) arranged between the two layers of the substrate; and in which the at least one attenuation layer is/are heterogeneous.

公开(公告)号：US20220247374A1

公开(公告)日：2022-08-04

申请号：US17597581

申请日：2020-03-26

Applicant: Soitec

Inventor： Isabelle Bertrand ,  Alexis Drouin ,  Isabelle Huyet ,  Eric Butaud ,  Morgane Logiou

IPC: H03H3/08 ,  H03H9/02

Abstract: A method for manufacturing a structure comprising a thin layer transferred onto a support provided with a charge trapping layer, the method comprising the following steps: —preparing the support comprising forming the trapping layer on a base substrate, the trapping layer having a hydrogen concentration of less than 10{circumflex over ( )}18 at/cm{circumflex over ( )}; —joining the support to a donor substrate by way of a dielectric layer having a hydrogen concentration of less than 10{circumflex over ( )}20 at/cm{circumflex over ( )}3 or comprising a barrier preventing the diffusion of hydrogen toward the trapping layer or having low hydrogen diffusivity; —removing part of the donor substrate to form the thin layer; the manufacturing method exposing the structure to a temperature below a maximum temperature of 1000° C. The present disclosure also relates to a structure obtained at the end of this method.

公开(公告)号：US20200336127A1

公开(公告)日：2020-10-22

申请号：US16922758

申请日：2020-07-07

Applicant: Soitec

Inventor： Gweltaz Gaudin ,  Isabelle Huyet

IPC: H03H9/02 ,  H01L41/08

Abstract: A hybrid structure for a surface acoustic wave device comprises a useful layer of piezoelectric material having a free first surface and a second surface disposed on a support substrate that has a lower coefficient of thermal expansion than that of the useful layer. The hybrid structure further comprises a trapping layer disposed between the useful layer and the support substrate, and at least one functional interface of predetermined roughness between the useful layer and the trapping layer.

公开(公告)号：US20200186117A1

公开(公告)日：2020-06-11

申请号：US16618696

申请日：2018-06-21

Applicant: Soitec

Inventor： Isabelle Huyet ,  Cedric Charles-Alfred ,  Didier Landru ,  Alexis Drouin

IPC: H03H3/10 ,  H01L41/187 ,  H01L41/312

Abstract: A process for transferring a thin layer consisting of a first material to a support substrate consisting of a second material having a different thermal expansion coefficient, comprises providing a donor substrate composed of an assembly of a thick layer formed of the first material and of a handle substrate having a thermal expansion coefficient similar to that of the support substrate, and the donor substrate having a main face on the side of the thick layer introducing light species into the thick layer to generate a plane of weakness therein and to define the thin layer between the plane of weakness and the main face of the donor substrate; assembling the main face of the donor substrate with a face of the support substrate; and detachment of the thin layer at the plane of weakness, the detachment comprising application of a heat treatment.

公开(公告)号：US20240429683A1

公开(公告)日：2024-12-26

申请号：US18685257

申请日：2022-09-08

Applicant: SOITEC

Inventor： Christophe Figuet ,  Isabelle Huyet

IPC: H01S5/183

Abstract: A semiconductor structure for optoelectronic applications; comprises a first layer made of a crystalline semiconductor, the layer being disposed on an intermediate layer including or adjacent to a direct-bonding interface, the intermediate layer being disposed on a second layer made of a crystalline semiconductor material. The intermediate layer is composed of a material that is different from those of the first and second layers, and the attenuation coefficient of which is lower than 100. The refractive index of the intermediate layer differs by less than 0.3 from the refractive index of at least one sub-layer of the first layer adjacent to the intermediate layer, and of at least one sub-layer of the second layer adjacent to the intermediate layer.

公开(公告)号：US20240120191A1

公开(公告)日：2024-04-11

申请号：US18263802

申请日：2022-02-14

Applicant: Soitec

Inventor： Isabelle Huyet ,  Luciana Capello

IPC: H01L21/02

CPC classification number: H01L21/02032 ,  H01L21/02008

Abstract: A method is used for preparing the residue of a donor substrate, the residue comprising, on a peripheral zone of a main face, a peripheral ring. The method comprises: a first step of removing at least part of the peripheral ring; a second step of processing the main face of the residue aiming to remove a surface layer; a third step, after the second step, of grinding the peripheral zone of the main face of the residue, the third grinding step aiming to reduce the elevation of the peripheral zone.

公开(公告)号：US20240072753A1

公开(公告)日：2024-02-29

申请号：US17430662

申请日：2020-03-26

Applicant: Soitec

Inventor： Alexis Drouin ,  Isabelle Huyet ,  Morgane Logiou

IPC: H03H3/08 ,  H03H9/02

CPC classification number: H03H3/08 ,  H03H9/02559 ,  H03H9/02574

Abstract: A method for preparing a monodomain thin layer of ferroelectric material comprises: implanting light species in a ferroelectric donor substrate in order to form an embrittlement plane and to define a first layer therein; assembling the donor substrate with a support substrate by means of a dielectric assembly layer; and fracturing the donor substrate at the embrittlement plane. The dielectric assembly layer comprises an oxide having a hydrogen concentration lower than that of the first layer or preventing the diffusion of hydrogen to the first layer, or the dielectric assembly layer comprises a barrier preventing the diffusion of hydrogen to the first layer. A heat treatment of a free face of the first layer is used to diffuse the hydrogen contained therein and cause the multidomain transformation of a surface portion of this first layer, followed by a thinning of the first layer in order to remove the surface portion.

公开(公告)号：US11742817B2

公开(公告)日：2023-08-29

申请号：US16618696

申请日：2018-06-21

Applicant: Soitec

Inventor： Isabelle Huyet ,  Cedric Charles-Alfred ,  Didier Landru ,  Alexis Drouin

IPC: H01L21/02 ,  H03H3/10 ,  H10N30/072 ,  H10N30/853

CPC classification number: H03H3/10 ,  H10N30/072 ,  H10N30/8536 ,  H10N30/8542 ,  H10N30/8548 ,  H10N30/8554

Abstract: A process for transferring a thin layer consisting of a first material to a support substrate consisting of a second material having a different thermal expansion coefficient, comprises providing a donor substrate composed of an assembly of a thick layer formed of the first material and of a handle substrate having a thermal expansion coefficient similar to that of the support substrate, and the donor substrate having a main face on the side of the thick layer introducing light species into the thick layer to generate a plane of weakness therein and to define the thin layer between the plane of weakness and the main face of the donor substrate; assembling the main face of the donor substrate with a face of the support substrate; and detachment of the thin layer at the plane of weakness, the detachment comprising application of a heat treatment.