A semiconductor device includes a first insulating layer; a second insulating layer arranged over the first insulating layer; a memory structure arranged within a memory region and including a resistance changing memory element within the first insulating layer; and a logic structure arranged within a logic region. In the memory region, the first insulating layer may contact the second insulating layer and in the logic region, the semiconductor device may further include a stop layer arranged between the first insulating layer and the second insulating layer.