- 专利标题: Cladded metal interconnects
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申请号: US16141522申请日: 2018-09-25
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公开(公告)号: US11749560B2公开(公告)日: 2023-09-05
- 发明人: Thomas Marieb , Zhiyong Ma , Miriam R. Reshotko , Christopher Jezewski , Flavio Griggio , Rahim Kasim , Nikholas G. Toledo
- 申请人: INTEL CORPORATION
- 申请人地址: US CA Santa Clara
- 专利权人: Intel Corporation
- 当前专利权人: Intel Corporation
- 当前专利权人地址: US CA Santa Clara
- 代理机构: Schwabe, Williamson & Wyatt P.C.
- 主分类号: H01L21/768
- IPC分类号: H01L21/768 ; H01L23/532 ; C25D3/58 ; C23C18/48
摘要:
Techniques are disclosed for providing cladded metal interconnects. Given an interconnect trench, a barrier layer is conformally deposited onto the bottom and sidewalls of the trench. A first layer of a bilayer adhesion liner is selectively deposited on the barrier layer, and a second layer of the bilayer adhesion liner is selectively deposited on the first layer. An interconnect metal is deposited into the trench above the bilayer adhesion liner. Any excess interconnect metal is recessed to get the top surface of the interconnect metal to a proper plane. Recessing the excess interconnect metal may include recessing previously deposited excess adhesion liner and barrier layer materials. The exposed top surface of the interconnect metal in the trench is then capped with the bilayer adhesion liner materials to provide a cladded metal interconnect core. In some embodiments, the adhesion liner is a single layer adhesion liner.
公开/授权文献
- US20200098619A1 CLADDED METAL INTERCONNECTS 公开/授权日:2020-03-26
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