Invention Grant
- Patent Title: Semiconductor device including an oxide thin film transistor
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Application No.: US17453522Application Date: 2021-11-04
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Publication No.: US11751434B2Publication Date: 2023-09-05
- Inventor: Kyoungseok Son , Dohyun Kwon , Jonghan Jeong , Jonghyun Choi , Eoksu Kim , Jaybum Kim , Junhyung Lim , Jihun Lim
- Applicant: SAMSUNG DISPLAY CO., LTD.
- Applicant Address: KR Yongin-si
- Assignee: SAMSUNG DISPLAY CO., LTD.
- Current Assignee: SAMSUNG DISPLAY CO., LTD.
- Current Assignee Address: KR Yongin-si
- Agency: F. CHAU & ASSOCIATES, LLC
- Priority: KR 20160111016 2016.08.30
- The original application number of the division: US16836490 2020.03.31
- Main IPC: H10K59/121
- IPC: H10K59/121 ; G09G3/3225 ; H10K59/124 ; G09G3/3233 ; H10K59/126 ; G09G3/3266 ; G09G3/3275 ; H01L27/12 ; H01L29/786

Abstract:
A semiconductor device includes a base substrate, a first transistor disposed on the base substrate, the first transistor including a first input electrode, a first output electrode, a first control electrode, and a first semiconductor pattern including a crystalline semiconductor, a second transistor disposed on the base substrate, the second transistor including a second input electrode, a second output electrode, a second control electrode, and a second semiconductor pattern including an oxide semiconductor, a plurality of insulating layers disposed on the base substrate, and an upper electrode disposed on the first control electrode with at least one insulating layer of the plurality of insulating layers interposed between the upper electrode and the first control electrode. The upper electrode overlaps the first control electrode and forms a capacitor with the first control electrode.
Public/Granted literature
- US20220059634A1 SEMICONDUCTOR DEVICE INCLUDING AN OXIDE THIN FILM TRANSISTOR Public/Granted day:2022-02-24
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