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公开(公告)号：US11812647B2
公开(公告)日：2023-11-07
申请号：US17841206
申请日：2022-06-15
发明人： Soyoung Koo , Eoksu Kim , Hyungjun Kim , Yunyong Nam , Junhyung Lim , Kyungjin Jeon
IPC分类号： H10K59/131 , G09G3/3266 , G09G3/3291 , H10K59/122 , H10K59/12
CPC分类号： H10K59/131 , G09G3/3266 , G09G3/3291 , H10K59/122 , G09G2300/0426 , H10K59/1201
摘要： A display apparatus is disclosed that includes contact holes formed to expose at least a portion of a conductive layer or a semiconductor layer without damage to the surface of the conductive layer or the semiconductor layer, and a method of manufacturing the display apparatus. The display apparatus includes a substrate, a conductive mound arranged on the substrate, a first insulating mound arranged on the substrate, and a semiconductor layer including a first region arranged on the conductive mound, and a second region arranged on the first insulating mound. The second region of the semiconductor layer substantially covers an upper surface of the first insulating mound.
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公开(公告)号：US11751434B2
公开(公告)日：2023-09-05
申请号：US17453522
申请日：2021-11-04
发明人： Kyoungseok Son , Dohyun Kwon , Jonghan Jeong , Jonghyun Choi , Eoksu Kim , Jaybum Kim , Junhyung Lim , Jihun Lim
IPC分类号： H10K59/121 , G09G3/3225 , H10K59/124 , G09G3/3233 , H10K59/126 , G09G3/3266 , G09G3/3275 , H01L27/12 , H01L29/786
CPC分类号： H10K59/1213 , G09G3/3225 , G09G3/3233 , H10K59/124 , H10K59/1216 , G09G3/3266 , G09G3/3275 , G09G2300/0413 , G09G2300/0426 , G09G2310/08 , H01L27/1225 , H01L27/1248 , H01L27/1251 , H01L27/1255 , H01L29/7869 , H01L29/78633 , H01L29/78675 , H10K59/126
摘要： A semiconductor device includes a base substrate, a first transistor disposed on the base substrate, the first transistor including a first input electrode, a first output electrode, a first control electrode, and a first semiconductor pattern including a crystalline semiconductor, a second transistor disposed on the base substrate, the second transistor including a second input electrode, a second output electrode, a second control electrode, and a second semiconductor pattern including an oxide semiconductor, a plurality of insulating layers disposed on the base substrate, and an upper electrode disposed on the first control electrode with at least one insulating layer of the plurality of insulating layers interposed between the upper electrode and the first control electrode. The upper electrode overlaps the first control electrode and forms a capacitor with the first control electrode.
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公开(公告)号：US20220059634A1
公开(公告)日：2022-02-24
申请号：US17453522
申请日：2021-11-04
发明人： Kyoungseok Son , Dohyun Kwon , Jonghan Jeong , Jonghyun Choi , Eoksu Kim , Jaybum Kim , Junhyung Lim , Jihn Lim
IPC分类号： H01L27/32 , G09G3/3225 , G09G3/3233
摘要： A semiconductor device includes a base substrate, a first transistor disposed on the base substrate, the first transistor including a first input electrode, a first output electrode, a first control electrode, and a first semiconductor pattern including a crystalline semiconductor, a second transistor disposed on the base substrate, the second transistor including a second input electrode, a second output electrode, a second control electrode, and a second semiconductor pattern including an oxide semiconductor, a plurality of insulating layers disposed on the base substrate, and an upper electrode disposed on the first control electrode with at least one insulating layer of the plurality of insulating layers interposed between the upper electrode and the first control electrode. The upper electrode overlaps the first control electrode and forms a capacitor with the first control electrode.
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公开(公告)号：US11049929B2
公开(公告)日：2021-06-29
申请号：US16804152
申请日：2020-02-28
发明人： Kyungjin Jeon , Joonseok Park , Soyoung Koo , Myounghwa Kim , Eoksu Kim , Taesang Kim , Hyungjun Kim , Yeonkeon Moon , Geunchul Park , Sangwoo Sohn , Junhyung Lim , Hyelim Choi
摘要： A display device includes: a substrate; a first thin film transistor and a second thin film transistor arranged over the substrate; a display element connected to the first thin film transistor; a wiring connected to the second thin film transistor and including a first wiring layer and a second wiring layer; a pattern insulating layer arranged between the first wiring layer and the second wiring layer; a planarization layer covering the wiring; and a connection electrode arranged on the planarization layer and connected to the first wiring layer and the second wiring layer respectively through a first contact hole and a second contact hole.
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公开(公告)号：US10340472B2
公开(公告)日：2019-07-02
申请号：US15657369
申请日：2017-07-24
发明人： Jaybum Kim , Eoksu Kim , Kyoungseok Son , Junhyung Lim , Jihun Lim
摘要： A display device includes a base substrate, a first transistor, a second transistor, an organic light emitting diode, and a capacitor electrically connected to the first thin film transistor. The first transistor includes a first semiconductor pattern below a first interlayer insulation layer and a first control electrode above the first interlayer insulation layer and below a second interlayer insulation layer. The second transistor includes a second control electrode above the first interlayer insulation layer and below the second interlayer insulation layer. A second semiconductor pattern is above the second interlayer insulation layer.
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公开(公告)号：US11877479B2
公开(公告)日：2024-01-16
申请号：US18090401
申请日：2022-12-28
发明人： Kyoungseok Son , Myounghwa Kim , Eoksu Kim , Taesang Kim , Masataka Kano
IPC分类号： H01L27/12 , H10K59/122 , H10K50/11 , H10K50/844 , H10K59/123 , H10K59/124 , H10K59/131 , H10K59/121 , H10K71/00 , H10K77/10 , H10K59/12 , H10K102/00
CPC分类号： H10K59/122 , H01L27/124 , H01L27/1225 , H01L27/1288 , H10K50/11 , H10K50/844 , H10K59/123 , H10K59/124 , H10K59/1213 , H10K59/131 , H10K71/00 , H10K77/111 , H10K59/1201 , H10K2102/311
摘要： A method of fabricating a display panel may include forming an oxide semiconductor pattern on a base layer including a first region and a second region, etching first, second, and third insulating layers to form a first groove that overlaps the second region, forming electrodes on the third insulating layer, forming a fourth insulating layer on the third insulating layer to cover the electrodes, thermally treating the fourth insulating layer, forming an organic layer to cover the fourth insulating layer, and forming an organic light emitting diode on the organic layer.
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公开(公告)号：US11678547B2
公开(公告)日：2023-06-13
申请号：US17328026
申请日：2021-05-24
发明人： Kyungjin Jeon , Joonseok Park , Soyoung Koo , Myounghwa Kim , Eoksu Kim , Taesang Kim , Hyungjun Kim , Yeonkeon Moon , Geunchul Park , Sangwoo Sohn , Junhyung Lim , Hyelim Choi
CPC分类号： H01L27/3279 , H01L27/3248 , H01L27/3258 , H01L27/3265 , H01L51/524 , H01L51/5253 , H01L51/56 , H01L27/124 , H01L27/1248 , H01L27/1255 , H01L27/1288 , H01L28/60 , H01L2227/323
摘要： A display device includes: a substrate; a first thin film transistor and a second thin film transistor arranged over the substrate; a display element connected to the first thin film transistor; a wiring connected to the second thin film transistor and including a first wiring layer and a second wiring layer; a pattern insulating layer arranged between the first wiring layer and the second wiring layer; a planarization layer covering the wiring; and a connection electrode arranged on the planarization layer and connected to the first wiring layer and the second wiring layer respectively through a first contact hole and a second contact hole.
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公开(公告)号：US11552142B2
公开(公告)日：2023-01-10
申请号：US17116943
申请日：2020-12-09
发明人： Kyoungseok Son , Myounghwa Kim , Eoksu Kim , Taesang Kim , Masataka Kano
摘要： A method of fabricating a display panel may include forming an oxide semiconductor pattern on a base layer including a first region and a second region, etching first, second, and third insulating layers to form a first groove that overlaps the second region, forming electrodes on the third insulating layer, forming a fourth insulating layer on the third insulating layer to cover the electrodes, thermally treating the fourth insulating layer, forming an organic layer to cover the fourth insulating layer, and forming an organic light emitting diode on the organic layer.
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公开(公告)号：US10854837B2
公开(公告)日：2020-12-01
申请号：US16911525
申请日：2020-06-25
发明人： Jaybum Kim , Eoksu Kim , Kyoungseok Son , Junhyung Lim , Jihun Lim
摘要： A display device includes a base substrate, a first transistor, a second transistor, an organic light emitting diode, and a capacitor electrically connected to the first thin film transistor. The first transistor includes a first semiconductor pattern below a first interlayer insulation layer and a first control electrode above the first interlayer insulation layer and below a second interlayer insulation layer. The second transistor includes a second control electrode above the first interlayer insulation layer and below the second interlayer insulation layer. A second semiconductor pattern is above the second interlayer insulation layer.
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公开(公告)号：US10361260B2
公开(公告)日：2019-07-23
申请号：US15684452
申请日：2017-08-23
发明人： Jaybum Kim , Kyoungseok Son , Jihun Lim , Eoksu Kim , Junhyung Lim
IPC分类号： H01L27/32 , H01L27/12 , G09G3/3225 , G09G3/3266 , G09G3/3275 , H01L29/786
摘要： A semiconductor device includes a base substrate, a first transistor including a first semiconductor pattern, a first control electrode, a first input electrode, and a first output electrode, each of which is disposed on the base substrate, a second transistor including a second semiconductor pattern, a second control electrode, a second input electrode, and a second output electrode, and a plurality of insulating layers. A single first through part exposes the first control electrode and the first semiconductor pattern disposed on both sides of the first control electrode.
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