Invention Grant
- Patent Title: Display device and manufacturing method thereof including contact holes optimized to prevent excess hydrogen from introducing into semiconductor layer
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Application No.: US17220966Application Date: 2021-04-02
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Publication No.: US11751439B2Publication Date: 2023-09-05
- Inventor: Hyung Jun Kim , So Young Koo , Eok Su Kim , Yun Yong Nam , Jun Hyung Lim , Kyung Jin Jeon
- Applicant: Samsung Display Co., LTD.
- Applicant Address: KR Yongin-si
- Assignee: SAMSUNG DISPLAY CO., LTD.
- Current Assignee: SAMSUNG DISPLAY CO., LTD.
- Current Assignee Address: KR Gyeonggi-Do
- Agency: CANTOR COLBURN LLP
- Priority: KR 20200083521 2020.07.07
- Main IPC: H10K59/124
- IPC: H10K59/124 ; H10K59/126 ; H10K59/131 ; H10K59/121 ; H10K71/00 ; H01L27/12 ; H01L29/786 ; H10K59/12

Abstract:
A display device includes: a substrate; a first semiconductor layer disposed on the substrate, where the first semiconductor layer includes a channel region and a doped region; a first gate electrode disposed to overlap the channel region of the first semiconductor layer; an intermediate film disposed on the first semiconductor layer and the first gate electrode; and a first electrode disposed on the intermediate film, where an opening is defined through the intermediate film to overlap the doped region of the first semiconductor layer, the doped region of the first semiconductor layer and the first electrode contacts each other through the opening, and an area of a cross-section of the opening parallel to the substrate is in a range of about 49 μm2 to about 81 μm2.
Public/Granted literature
- US20220013608A1 DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF Public/Granted day:2022-01-13
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