公开(公告)号：US12218151B2

公开(公告)日：2025-02-04

申请号：US18480494

申请日：2023-10-03

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： So Young Koo ,  Jay Bum Kim ,  Kyung Jin Jeon ,  Eok Su Kim ,  Jun Hyung Lim

IPC: H01L33/62 ,  H01L27/12

Abstract: A display device according to an embodiment of the present disclosure includes: a substrate; a first conductive layer on the substrate; a first insulating layer on the first conductive layer; an active pattern on the first insulating layer and including a semiconductor material; a second insulating layer on the active pattern; and a second conductive layer on the second insulating layer, wherein the first insulating layer has a first opening exposing the first conductive layer, the second insulating layer has a second opening exposing the first conductive layer, a breadth of the first opening is different than a breadth of the second opening, and a side surface of the first opening and a side surface of the second opening are formed to a top surface of the first conductive layer.

公开(公告)号：US11950487B2

公开(公告)日：2024-04-02

申请号：US16562729

申请日：2019-09-06

Applicant: Samsung Display Co., Ltd.

Inventor： Joon Seok Park ,  Kyoung Seok Son ,  Jun Hyung Lim ,  Masataka Kano

IPC: H10K71/00 ,  H10K59/123 ,  H10K59/124 ,  H10K71/20 ,  H10K102/10

CPC classification number: H10K71/00 ,  H10K59/123 ,  H10K59/124 ,  H10K71/231 ,  H10K2102/102 ,  H10K2102/103

Abstract: A display apparatus including a base substrate, a first thin film transistor disposed on the base substrate, a via insulation layer disposed on the first thin film transistor, and a light emitting structure disposed on the via insulation layer. The first thin film transistor includes a first gate electrode, an oxide semiconductor overlapped with the first gate electrode, and including tin (Sn), an etch stopper disposed on the oxide semiconductor and including an oxide semiconductor material which does not include tin (Sn), a first source electrode making contact with the oxide semiconductor, and a first drain electrode making contact with the oxide semiconductor, and spaced apart from the first source electrode.

公开(公告)号：US11824061B2

公开(公告)日：2023-11-21

申请号：US16783002

申请日：2020-02-05

Applicant: Samsung Display Co., LTD.

Inventor： Joon Seok Park ,  Tae Sang Kim ,  Yeon Keon Moon ,  Geun Chul Park ,  Jun Hyung Lim ,  Kyung Jin Jeon

IPC: H01L27/12

CPC classification number: H01L27/1225 ,  H01L27/124 ,  H01L27/127 ,  H01L27/1251

Abstract: A display device includes a plurality of pixels respectively coupled to scan lines and data lines intersecting the scan lines, wherein at least some of the pixels includes a driving transistor including a substrate, a first insulating layer disposed on the substrate, a first active layer disposed on the first insulating layer, a first gate electrode disposed on the first active layer, and a first source electrode and a first drain electrode electrically connected to the first active layer, the first drain electrode being spaced apart from the first source electrode by a first distance, and a switching transistor including a second gate electrode disposed between the substrate and the first insulating layer, a second active layer disposed on the same layer as the first active layer, and a second source electrode and a second drain electrode electrically connected to the second active layer, the second drain electrode being spaced apart from the second source electrode by a second distance different from the first distance.

公开(公告)号：US11721768B2

公开(公告)日：2023-08-08

申请号：US17349214

申请日：2021-06-16

Applicant: Samsung Display Co., LTD. ,  Industry-Academic Cooperation Foundation, Yonsei University

Inventor： Taesang Kim ,  Min Seong Kim ,  Hyun Jae Kim ,  Jun Hyung Lim

IPC: H01L27/00 ,  H01L29/00 ,  H01L29/786 ,  H01L27/12 ,  H01L29/10 ,  H01L29/24

CPC classification number: H01L29/7869 ,  H01L27/1251 ,  H01L29/105 ,  H01L29/24

Abstract: A transistor includes a gate electrode, an active layer facing the gate electrode, and a source electrode and a drain electrode connected to the active layer. The active layer includes a lower active layer including an oxide-based semiconductor material, and an upper active layer including the oxide-based semiconductor material and an oxygen-gettering material.

公开(公告)号：US11626426B2

公开(公告)日：2023-04-11

申请号：US17109601

申请日：2020-12-02

Applicant: Samsung Display Co., Ltd.

Inventor： Kyung Jin Jeon ,  So Young Koo ,  Eok Su Kim ,  Hyung Jun Kim ,  Joon Seok Park ,  Jun Hyung Lim

IPC: H01L27/14 ,  H01L27/12 ,  H01L27/32

Abstract: A display device includes: a substrate; a first conductive layer on the substrate and comprising a first signal line; an insulating layer pattern on the first conductive layer; a semiconductor pattern on the insulating layer pattern; a gate insulating layer on the semiconductor pattern; and a second conductive layer comprising a gate electrode on the gate insulting layer and a first source/drain electrode and a second source/drain electrode, each on at least a part of the semiconductor pattern, wherein the insulating layer pattern and the semiconductor pattern have a same planar shape, the semiconductor pattern comprises a channel region overlapping the gate electrode, a first source/drain region on a first side of the channel region and a second source/drain region on a second side of the channel region, and the first source/drain electrode electrically connects the first source/drain region and the first signal line.

公开(公告)号：US11594559B2

公开(公告)日：2023-02-28

申请号：US17157184

申请日：2021-01-25

Applicant: Samsung Display Co., LTD.

Inventor： Joon Seok Park ,  So Young Koo ,  Eok Su Kim ,  Hyung Jun Kim ,  Sang Woo Sohn ,  Jun Hyung Lim ,  Kyung Jin Jeon

IPC: H01L27/00 ,  H01L29/00 ,  H01L27/12

Abstract: A display device may include a first gate electrode disposed on a substrate, a buffer layer disposed on the first gate electrode, a first active pattern on the buffer layer, the first active pattern overlapping the first gate electrode and including an oxide semiconductor, a second active pattern on the buffer layer, spaced apart from the first active pattern, and including an oxide semiconductor, the second active pattern including a channel region, and a source region and a drain region, a source pattern and a drain pattern respectively at ends of the first active pattern, a first insulation pattern disposed on the first active pattern, a second insulation pattern disposed on the channel region, a first oxygen supply pattern on the first insulation pattern, a second oxygen supply pattern on the second insulation pattern, and a second gate electrode on the second oxygen supply pattern.

公开(公告)号：US11521850B2

公开(公告)日：2022-12-06

申请号：US16440740

申请日：2019-06-13

Applicant: SAMSUNG DISPLAY CO., LTD ,  YONSEI UNIVERSITY, UNIVERSITY-INDUSTRY FOUNDATION (UIF)

Inventor： Jun Hyung Lim ,  Hyung Jun Kim ,  Sun Hee Lee ,  Seung Gi Seo ,  Whang Je Woo

IPC: H01L21/02 ,  H01L29/66 ,  H01L29/49 ,  H01L29/24 ,  H01L29/786 ,  H01L29/16

Abstract: A method for manufacturing a semiconductor device according to an, exemplary embodiment of the present disclosure includes: forming a semiconductor layer on a substrate in a chamber; and forming a semiconductor layer on a substrate in a chamber. Forming the insulation layer includes: (a) injecting precursors that include a metal into a surface of the semiconductor layer; (b) removing precursors that are not adsorbed; (c) injecting reactants onto the surface of the semiconductor layer; and (d) removing residual reactants. The semiconductor layer includes a semiconductor material that has a layered structure.

公开(公告)号：US11469283B2

公开(公告)日：2022-10-11

申请号：US16952762

申请日：2020-11-19

Applicant: Samsung Display Co., LTD.

Inventor： Myoung Hwa Kim ,  Joon Seok Park ,  Tae Sang Kim ,  Yeon Keon Moon ,  Geun Chul Park ,  Sang Woo Sohn ,  Jun Hyung Lim ,  Hye Lim Choi

IPC: H01L27/32 ,  H01L27/12 ,  H01L29/423

Abstract: A display device is provided. The display device includes a substrate, a first active layer of a first transistor and a second active layer of a second transistor which are disposed on the substrate, a first gate insulating layer disposed on the first active layer, an oxide layer disposed on the first gate insulating layer and including an oxide semiconductor, a first gate electrode disposed on the oxide layer, a second gate insulating layer disposed on the first gate electrode and the second active layer, and a second gate electrode which overlaps the second active layer in a thickness direction of the substrate and is disposed on the second gate insulating layer, where the oxide layer overlaps the first active layer and does not overlap the second active layer in the thickness direction.

公开(公告)号：US11430859B2

公开(公告)日：2022-08-30

申请号：US16885598

申请日：2020-05-28

Applicant: Samsung Display Co., Ltd.

Inventor： Joon Seok Park ,  Myounghwa Kim ,  Tae Sang Kim ,  Hyungjun Kim ,  Yeon Keon Moon ,  Geunchul Park ,  Sangwoo Sohn ,  Jun Hyung Lim ,  Kyung Jin Jeon ,  Hye Lim Choi

IPC: H01L29/08 ,  H01L27/32

Abstract: A display device includes a first pixel, a second pixel, a first data line connected to the first pixel, and a second data line connected to the second pixel. Each of the first pixel and the second pixel includes a transistor including a conductive layer, a semiconductor layer on the conductive layer, a gate electrode on the semiconductor layer, and a source/drain electrode connected to the semiconductor layer, a capacitor including a first capacitor electrode in a same layer as the gate electrode and a second capacitor electrode on the first capacitor electrode, and a light emitting device on the transistor and the capacitor. The first data line is in a same layer as the source/drain electrode, and the second data line is in a same layer as one of the conductive layer and the second capacitor electrode.

公开(公告)号：US20160300526A1

公开(公告)日：2016-10-13

申请号：US14926922

申请日：2015-10-29

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Ji Hun Lim ,  Yeon Keon Moon ,  Masataka Kano ,  Jun Hyung Lim

IPC: G09G3/32 ,  G09G3/36

CPC classification number: G09G3/3233 ,  G09G2300/0842 ,  G09G2320/043

Abstract: A display device includes: a plurality of pixels, wherein each of the plurality of pixels includes at least two double-gate transistors including a first gate electrode and a second gate electrode; conduction between source electrodes and drain electrodes of the at least two double-gate transistors is controlled by a voltage applied to the first gate electrode, and electrical connection between the second gate electrode and the first gate electrode of each of the at least two double-gate transistors is determined depending on a polarity of a voltage applied on average to each of the at least two double-gate transistors.

Abstract translation: 显示装置包括：多个像素，其中所述多个像素中的每一个包括至少两个包括第一栅电极和第二栅电极的双栅晶体管; 所述至少两个双栅极晶体管的源电极和漏电极之间的导通由施加到所述第一栅电极的电压以及所述至少两个双栅极晶体管中的每一个的所述第二栅电极和所述第一栅电极之间的电连接来控制， 取决于对至少两个双栅极晶体管中的每一个平均施加的电压的极性来确定栅极晶体管。