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公开(公告)号：US11856818B2
公开(公告)日：2023-12-26
申请号：US17572913
申请日：2022-01-11
Applicant: Samsung Display Co., Ltd.
Inventor： Joon Woo Bae , So Young Koo , Han Bit Kim , Thanh Tien Nguyen , Kyoung Won Lee , Yong Su Lee , Jae Seob Lee , Gyoo Chul Jo
IPC: H10K59/121 , H10K50/844 , H10K59/126 , H10K59/131 , H01L29/786 , H01L27/12
CPC classification number: H10K59/1213 , H10K50/844 , H10K59/126 , H10K59/1216 , H10K59/131 , H01L27/124 , H01L27/1225 , H01L27/1255 , H01L29/7869 , H01L29/78633 , H01L29/78675
Abstract: An organic light emitting diode display according to an exemplary embodiment includes: a substrate; a first buffer layer on the substrate; a first semiconductor layer on the first buffer layer; a first gate insulating layer on the first semiconductor layer; a first gate electrode and a blocking layer on the first gate insulating layer; a second buffer layer on the first gate electrode; a second semiconductor layer on the second buffer layer; a second gate insulating layer on the second semiconductor layer; and a second gate electrode on the second gate insulating layer.
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公开(公告)号：US09508856B2
公开(公告)日：2016-11-29
申请号：US14436241
申请日：2013-10-15
Inventor： Hiroaki Tao , Takeaki Maeda , Aya Miki , Toshihiro Kugimiya , Byung Du Ahn , So Young Koo , Gun Hee Kim
IPC: H01L29/786
CPC classification number: H01L29/78606 , H01L29/7869 , H01L29/78693
Abstract: Provided is a thin film transistor wherein the shape of a protrusion formed on the interface between an oxide semiconductor layer and a protection film is suitably controlled, and stable characteristics are achieved. This thin film transistor is characterized in that: the thin film transistor has an oxide semiconductor layer formed of an oxide containing at least In, Zn and Sn as metal elements, and a protection film directly in contact with the oxide semiconductor layer; and the maximum height of a protrusion formed on the oxide semiconductor layer surface directly in contact with the protection film is less than 5 nm.
Abstract translation: 提供一种薄膜晶体管，其中形成在氧化物半导体层和保护膜之间的界面上的突起的形状被适当地控制，并且实现了稳定的特性。 该薄膜晶体管的特征在于：薄膜晶体管具有由至少含有In，Zn和Sn作为金属元素的氧化物和与氧化物半导体层直接接触的保护膜形成的氧化物半导体层; 在与保护膜直接接触的氧化物半导体层表面上形成的突起的最大高度小于5nm。
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公开(公告)号：US11942488B2
公开(公告)日：2024-03-26
申请号：US18193200
申请日：2023-03-30
Applicant: SAMSUNG DISPLAY CO., LTD.
Inventor： Kyung Jin Jeon , So Young Koo , Eok Su Kim , Hyung Jun Kim , Joon Seok Park , Jun Hyung Lim
IPC: H01L27/14 , H01L27/12 , H10K59/131
CPC classification number: H01L27/124 , H01L27/1262 , H10K59/131
Abstract: A display device includes: a substrate; a first conductive layer on the substrate and comprising a first signal line; an insulating layer pattern on the first conductive layer; a semiconductor pattern on the insulating layer pattern; a gate insulating layer on the semiconductor pattern; and a second conductive layer comprising a gate electrode on the gate insulting layer and a first source/drain electrode and a second source/drain electrode, each on at least a part of the semiconductor pattern, wherein the insulating layer pattern and the semiconductor pattern have a same planar shape, the semiconductor pattern comprises a channel region overlapping the gate electrode, a first source/drain region on a first side of the channel region and a second source/drain region on a second side of the channel region, and the first source/drain electrode electrically connects the first source/drain region and the first signal line.
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公开(公告)号：US11942482B2
公开(公告)日：2024-03-26
申请号：US17398566
申请日：2021-08-10
Applicant: Samsung Display Co., LTD.
Inventor： Hyung Jun Kim , So Young Koo , Eok Su Kim , Yun Yong Nam , Jun Hyung Lim , Kyung Jin Jeon
IPC: H01L27/12 , H01L29/78 , H01L29/786 , H10K59/12
CPC classification number: H01L27/1225 , H01L29/7869 , H01L29/78696 , H10K59/1201
Abstract: A display device according to an embodiment includes a light blocking layer disposed on a substrate; an oxygen supply layer disposed on and contacting the light blocking layer; a semiconductor layer disposed on the oxygen supply layer; and a light emitting diode electrically connected with the semiconductor layer. The semiconductor layer includes an oxide semiconductor, and the oxygen supply layer includes a metal oxide that includes at least one of indium, zinc, gallium, and tin.
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公开(公告)号：US11894355B2
公开(公告)日：2024-02-06
申请号：US17471581
申请日：2021-09-10
Applicant: Samsung Display Co., LTD.
Inventor： Kyung Jin Jeon , So Young Koo , Eok Su Kim , Hyung Jun Kim , Yun Yong Nam , Jun Hyung Lim
CPC classification number: H01L25/167 , H01L27/124 , H01L27/1259
Abstract: A display device includes a first conductive layer disposed on a substrate, a passivation layer disposed on the first conductive layer, a second conductive layer disposed on the passivation layer, a via layer disposed on the second conductive layer, a third conductive layer disposed on the via layer, the third conductive layer including a first electrode, a second electrode, a connection pattern, the first electrode, the second electrode, and the connection pattern being spaced apart from each other, and a light emitting element, a first end and a second end of the light emitting element being disposed on the first electrode and the second electrode, respectively, wherein the connection pattern electrically connects the first conductive layer and the second conductive layer through a first contact hole penetrating the via layer and the passivation layer.
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Patent Agency Ranking
公开(公告)号：US11765947B2
公开(公告)日：2023-09-19
申请号：US17107638
申请日：2020-11-30
Applicant: Samsung Display Co., LTD.
Inventor： Kyung Jin Jeon , So Young Koo , Eok Su Kim , Hyung Jun Kim , Jun Hyung Lim
IPC: H01L27/32 , H10K59/131 , H10K59/122 , H10K59/12
CPC classification number: H10K59/131 , H10K59/122 , H10K59/1201
Abstract: A display device includes a substrate, a first conductive layer on the substrate and including a lower light blocking pattern and a first signal line, a buffer layer on the first conductive layer, a semiconductor layer on the buffer layer and including a first semiconductor pattern and a second semiconductor pattern separated from the first semiconductor pattern, an insulating layer on the semiconductor layer and including an insulating layer pattern, a second conductive layer on the insulating layer and including a second signal line, a planarization layer on the second conductive layer, and a third conductive layer on the planarization layer and including an anode electrode. The first semiconductor pattern is electrically connected to the lower light blocking pattern by the anode electrode, and at least a portion of the second semiconductor pattern is isolated from and overlaps each of the first signal line and the second signal line.
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公开(公告)号：US12218151B2
公开(公告)日：2025-02-04
申请号：US18480494
申请日：2023-10-03
Applicant: SAMSUNG DISPLAY CO., LTD.
Inventor： So Young Koo , Jay Bum Kim , Kyung Jin Jeon , Eok Su Kim , Jun Hyung Lim
Abstract: A display device according to an embodiment of the present disclosure includes: a substrate; a first conductive layer on the substrate; a first insulating layer on the first conductive layer; an active pattern on the first insulating layer and including a semiconductor material; a second insulating layer on the active pattern; and a second conductive layer on the second insulating layer, wherein the first insulating layer has a first opening exposing the first conductive layer, the second insulating layer has a second opening exposing the first conductive layer, a breadth of the first opening is different than a breadth of the second opening, and a side surface of the first opening and a side surface of the second opening are formed to a top surface of the first conductive layer.
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公开(公告)号：US11626426B2
公开(公告)日：2023-04-11
申请号：US17109601
申请日：2020-12-02
Applicant: Samsung Display Co., Ltd.
Inventor： Kyung Jin Jeon , So Young Koo , Eok Su Kim , Hyung Jun Kim , Joon Seok Park , Jun Hyung Lim
Abstract: A display device includes: a substrate; a first conductive layer on the substrate and comprising a first signal line; an insulating layer pattern on the first conductive layer; a semiconductor pattern on the insulating layer pattern; a gate insulating layer on the semiconductor pattern; and a second conductive layer comprising a gate electrode on the gate insulting layer and a first source/drain electrode and a second source/drain electrode, each on at least a part of the semiconductor pattern, wherein the insulating layer pattern and the semiconductor pattern have a same planar shape, the semiconductor pattern comprises a channel region overlapping the gate electrode, a first source/drain region on a first side of the channel region and a second source/drain region on a second side of the channel region, and the first source/drain electrode electrically connects the first source/drain region and the first signal line.
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公开(公告)号：US11594559B2
公开(公告)日：2023-02-28
申请号：US17157184
申请日：2021-01-25
Applicant: Samsung Display Co., LTD.
Inventor： Joon Seok Park , So Young Koo , Eok Su Kim , Hyung Jun Kim , Sang Woo Sohn , Jun Hyung Lim , Kyung Jin Jeon
Abstract: A display device may include a first gate electrode disposed on a substrate, a buffer layer disposed on the first gate electrode, a first active pattern on the buffer layer, the first active pattern overlapping the first gate electrode and including an oxide semiconductor, a second active pattern on the buffer layer, spaced apart from the first active pattern, and including an oxide semiconductor, the second active pattern including a channel region, and a source region and a drain region, a source pattern and a drain pattern respectively at ends of the first active pattern, a first insulation pattern disposed on the first active pattern, a second insulation pattern disposed on the channel region, a first oxygen supply pattern on the first insulation pattern, a second oxygen supply pattern on the second insulation pattern, and a second gate electrode on the second oxygen supply pattern.
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公开(公告)号：US20150249159A1
公开(公告)日：2015-09-03
申请号：US14436241
申请日：2013-10-15
Inventor： Hiroaki Tao , Takeaki Maeda , Aya Miki , Toshihiro Kugimiya , Byung Du Ahn , So Young Koo , Gun Hee Kim
IPC: H01L29/786
CPC classification number: H01L29/78606 , H01L29/7869 , H01L29/78693
Abstract: Provided is a thin film transistor wherein the shape of a protrusion formed on the interface between an oxide semiconductor layer and a protection film is suitably controlled, and stable characteristics are achieved. This thin film transistor is characterized in that: the thin film transistor has an oxide semiconductor layer formed of an oxide containing at least In, Zn and Sn as metal elements, and a protection film directly in contact with the oxide semiconductor layer; and the maximum height of a protrusion formed on the oxide semiconductor layer surface directly in contact with the protection film is less than 5 nm.
Abstract translation: 提供一种薄膜晶体管，其中形成在氧化物半导体层和保护膜之间的界面上的突起的形状被适当地控制，并且实现了稳定的特性。 该薄膜晶体管的特征在于：薄膜晶体管具有由至少含有In，Zn和Sn作为金属元素的氧化物和与氧化物半导体层直接接触的保护膜形成的氧化物半导体层; 在与保护膜直接接触的氧化物半导体层表面上形成的突起的最大高度小于5nm。
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